The Solutions of Bit Line Failure Analysis: Low kV E-Beam, EBAC and LVI

Link Chang, Rick HC Wang, Andy Chang, Simon T. C. Wang, Yu Pang Chang, C. G. Song
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Abstract

As the analysis of SRAM Memory Built In Self Test (MBIST), some failure modes such as single bit (SB) or dual bit (DB) failure can be localized accurately. The inspection area of SRAM SB/DB is around 1~2um2. Traditionally, we can use the Focus Ion Beam (FIB) for cross section (X-S) checking as a much quicker inspection. However, X-S FIB inspection is not suitable to analyze some other failure modes such as bit line (BL) failure, which has a larger inspection area, around 200um2. We usually use the Scanning Electron Microscope (SEM) and I-Beam Voltage Contrast (VC) methods to have a plane-view check along the failed BL to find any abnormality. Sometimes a tiny defect is not easy to observe by plane-view checking. In this paper, three alternative methods, Low kV Electron Beam (E-Beam), Electron Beam Absorbed Current (EBAC) and Laser Voltage Image (LVI) are used in three real cases, and achieve a goal of higher hit rate and shorter cycle time.
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位线故障分析的解决方法:低千伏电子束、EBAC和LVI
通过对SRAM内存内建自检(MBIST)的分析,可以准确地定位出单比特(SB)或双比特(DB)等故障模式。SRAM SB/DB的检测面积约为1~2um2。传统上,我们可以使用聚焦离子束(FIB)进行横截面(X-S)检查,这是一种更快的检查。但是,X-S FIB检测不适合分析其他一些故障模式,如位线(BL)故障,其检测面积较大,在200um2左右。我们通常使用扫描电子显微镜(SEM)和i束电压对比(VC)方法沿着失效的BL进行平面检查,以发现任何异常。有时一个微小的缺陷是不容易观察到的平面视图检查。本文采用低千伏电子束(E-Beam)、电子束吸收电流(EBAC)和激光电压成像(LVI)三种替代方法,在三个实际案例中实现了更高的命中率和更短的周期时间。
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