A Robust Dual Directional SCR without Current Saturation Effect for ESD Applications

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI:10.1109/IPFA47161.2019.8984838

Feibo Du, Xiaoyu Dong, Chengjin Yang, Yichen Xu, Zhiwei Liu, Jizhi Liu, J. Liou

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Abstract

A robust dual directional SCR (RDDSCR) is proposed to suppress the current saturation effect in conventional dual directional SCR (DDSCR). By introducing a new current path with low resistance, the self-heating effect in NWELL regions of RDDSCR can be well avoided. The ESD I-V characteristics of RDDSCR and DDSCR are measured with the transmission line pulsing (TLP) tester. Moreover, TCAD simulation is also carried out to explore the physics mechanism in depth. Compared with DDSCR, the new RDDSCR possesses an improvement in failure current of 16.5% and an increase in holding voltage of about 2V. Furthermore, the influence of the external resistance on ESD performance of RDDSCR is also studied, where the resistance value of zero  has been demonstrated to be a better option. Compared with the existing optimization methods, RDDSCR method has been proven to be more efficient in inhibiting current saturation effect of DDSCR without any compromise on turn-on characteristic.

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用于ESD应用的无电流饱和效应的鲁棒双向可控硅

为了抑制传统双向可控硅(DDSCR)中的电流饱和效应，提出了一种鲁棒双向可控硅(RDDSCR)。通过引入一种新的低阻电流路径，可以很好地避免RDDSCR NWELL区的自热效应。采用传输线脉冲(TLP)测试仪测量了RDDSCR和DDSCR的ESD I-V特性。此外，还进行了TCAD仿真，深入探讨了其物理机理。与DDSCR相比，新型RDDSCR的失效电流提高了16.5%，保持电压提高了约2V。此外，还研究了外部电阻对RDDSCR ESD性能的影响，其中已证明零电阻值是更好的选择。与现有的优化方法相比，RDDSCR方法在不影响导通特性的情况下更有效地抑制了DDSCR的电流饱和效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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