F2: Memory trends: From big data to wearable devices

Jonathan Chang, Leland Chang, A. Dupret, Chulwoo Kim, F. Hamzaoglu, T. Yoshikawa
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引用次数: 2

Abstract

Memory continues to be a critical element in the full range of VLSI applications from big data to mobile applications to wearable devices. Recent trends, including process technology scaling limits, new memory applications, and evolving high-performance and low-power requirements, have driven the development of emerging memories. As both discrete and embedded memory scaling becomes ever more challenging, there is a widespread effort to look for alternative memory technologies to replace the entrenched SRAM, DRAM, or Flash. This forum brings together systems designers to discuss memory needs for future applications and memory designers to describe the latest developments in emerging and next generation memories. The first three speakers summarize memory requirements from a system perspective to cover a broad range of applications, including servers, data-centric computing, clients, notebooks, tablets, watches, glasses, and thermostats. The fourth speaker describes general design challenges for emerging memory in embedded systems to bridge to the second half of the program, which considers specific memory technologies. Two speakers will then present the challenges and solutions for Flash and DRAM scaling while the last two speakers will highlight the latest developments in MRAM and RRAM.
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F2:内存趋势:从大数据到可穿戴设备
从大数据到移动应用再到可穿戴设备,存储器一直是VLSI应用的关键元素。最近的趋势,包括工艺技术的扩展限制,新的存储器应用,以及不断发展的高性能和低功耗需求,推动了新兴存储器的发展。随着离散存储器和嵌入式存储器的扩展变得越来越具有挑战性,人们普遍致力于寻找替代存储器技术来取代根深蒂固的SRAM, DRAM或Flash。本次论坛汇集了系统设计师讨论未来应用的内存需求和内存设计师描述新兴和下一代内存的最新发展。前三位演讲者从系统的角度总结了内存需求,涵盖了广泛的应用,包括服务器、以数据为中心的计算、客户端、笔记本电脑、平板电脑、手表、眼镜和恒温器。第四位讲者描述了嵌入式系统中新兴内存的一般设计挑战,以衔接课程的后半部分,其中考虑了特定的内存技术。两位主讲人将介绍Flash和DRAM扩展的挑战和解决方案,而最后两位主讲人将重点介绍MRAM和RRAM的最新发展。
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