25.7 A 2.4GHz 4mW inductorless RF synthesizer

Long Kong, B. Razavi
{"title":"25.7 A 2.4GHz 4mW inductorless RF synthesizer","authors":"Long Kong, B. Razavi","doi":"10.1109/ISSCC.2015.7063120","DOIUrl":null,"url":null,"abstract":"Recent developments in RF receiver design have eliminated all on-chip inductors except for that used in the local oscillator. This paper addresses this \"last inductor\" problem and proposes an integer-N synthesizer architecture that achieves a phase noise and a figure of merit (FOM) comparable to those of LC-VCO-based realizations.","PeriodicalId":188403,"journal":{"name":"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2015.7063120","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 27

Abstract

Recent developments in RF receiver design have eliminated all on-chip inductors except for that used in the local oscillator. This paper addresses this "last inductor" problem and proposes an integer-N synthesizer architecture that achieves a phase noise and a figure of merit (FOM) comparable to those of LC-VCO-based realizations.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
25.7一个2.4GHz 4mW无电感射频合成器
射频接收器设计的最新发展已经消除了所有片上电感,除了本地振荡器中使用的电感。本文解决了这一“最后电感”问题,并提出了一种整数n合成器架构,该架构可实现与基于lc - vco的实现相媲美的相位噪声和品质因数(FOM)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
F2: Memory trends: From big data to wearable devices 13.6 A 600μW Bluetooth low-energy front-end receiver in 0.13μm CMOS technology 22.8 A 24-to-35Gb/s x4 VCSEL driver IC with multi-rate referenceless CDR in 0.13um SiGe BiCMOS 14.8 A 0.009mm2 2.06mW 32-to-2000MHz 2nd-order ΔΣ analogous bang-bang digital PLL with feed-forward delay-locked and phase-locked operations in 14nm FinFET technology 25.7 A 2.4GHz 4mW inductorless RF synthesizer
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1