An advanced electro-thermal simulation methodology for nanoscale device

L. Wang, T. Sadi, M. Nedjalkov, A. Brown, C. Alexander, B. Cheng, C. Millar, A. Asenov
{"title":"An advanced electro-thermal simulation methodology for nanoscale device","authors":"L. Wang, T. Sadi, M. Nedjalkov, A. Brown, C. Alexander, B. Cheng, C. Millar, A. Asenov","doi":"10.1109/IWCE.2015.7301989","DOIUrl":null,"url":null,"abstract":"In this work we propose an advanced electrothermal simulation methodology for nanoscale devices based on a macroscopic model for acoustic and optical phonon energy transfer. This is coupled with the Poisson equation and Current Continuity Equations (CCE) and solved self-consistently. This has been implemented in the GSS `atomistic' simulator GARAND, and the coupled 3D electro-thermal simulation using this methodology is demonstrated on an SOI FinFET example.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Workshop on Computational Electronics (IWCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2015.7301989","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In this work we propose an advanced electrothermal simulation methodology for nanoscale devices based on a macroscopic model for acoustic and optical phonon energy transfer. This is coupled with the Poisson equation and Current Continuity Equations (CCE) and solved self-consistently. This has been implemented in the GSS `atomistic' simulator GARAND, and the coupled 3D electro-thermal simulation using this methodology is demonstrated on an SOI FinFET example.
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一种先进的纳米器件电热模拟方法
在这项工作中,我们提出了一种基于声学和光学声子能量传递宏观模型的纳米级器件的先进电热模拟方法。将其与泊松方程和电流连续性方程(CCE)耦合,自洽求解。这已经在GSS“原子”模拟器GARAND中实现,并在SOI FinFET示例上演示了使用该方法的耦合3D电热模拟。
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