A. Afzalian, J. Huang, H. Ilatikhameneh, J. Charles, D. Lemus, J. Lopez, S. Perez Rubiano, T. Kubis, M. Povolotskyi, Gerhard Klimeck, M. Passlack, Y. Yeo
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引用次数: 7
Abstract
We explore here the suitability of a mode space tight binding algorithm to various III-V homo- and heterojunction nanowire devices. We show that in III-V materials, the number of unphysical modes to eliminate is very high compared to the Si case previously reported in the literature. Nevertheless, we demonstrate here the possibility to clean III-V mode space basis from the unphysical modes and achieve a significant speed up ratio (>150×), while keeping a very good accuracy (relative error lower than 1%) when using the algorithm for NEGF transport studies. Such results demonstrate the potential of mode space tight binding models and offer unprecedented possibilities for the full band simulation of nanostructures.
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