Pub Date : 2015-12-18DOI: 10.1109/IWCE.2015.7301941
N. Cavassilas, Clémentine Gelly, F. Michelini, M. Bescond
This theoretical work analyzes the photogeneration and the escape of carrier in InGaN/GaN core-shell nanowires. Our electronic transport model considers quantum behaviors such as confinement, tunneling, electron-phonon scattering and electron-photon interactions. The large lattice mismatch between InN and GaN requires the use of multiple quantum well design, in which either In content or well thickness is limited. Since thick GaN barriers are required in these stressed devices, we show that tunneling has a negligible impact on carrier escape, which is mostly achieved by the phonon scattering. Our conclusions demonstrate that a thick quantum well with a low In content, in which the confinement is moderate, is more efficient.
{"title":"Thermionic escape in quantum well solar cell","authors":"N. Cavassilas, Clémentine Gelly, F. Michelini, M. Bescond","doi":"10.1109/IWCE.2015.7301941","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301941","url":null,"abstract":"This theoretical work analyzes the photogeneration and the escape of carrier in InGaN/GaN core-shell nanowires. Our electronic transport model considers quantum behaviors such as confinement, tunneling, electron-phonon scattering and electron-photon interactions. The large lattice mismatch between InN and GaN requires the use of multiple quantum well design, in which either In content or well thickness is limited. Since thick GaN barriers are required in these stressed devices, we show that tunneling has a negligible impact on carrier escape, which is mostly achieved by the phonon scattering. Our conclusions demonstrate that a thick quantum well with a low In content, in which the confinement is moderate, is more efficient.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"213 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-12-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123387470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-25DOI: 10.1109/IWCE.2015.7301936
M. R. Nishat, S. Alqahtani, Y. Wu, V. Chimalgi, S. Ahmed
In this paper, we computationally evaluate and compare the performance of recently reported In0.25Ga0.75N/GaN disk-in-wire light emitting diodes (LED) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic bandstructure and interband optical transition rates. The microscopically determined transition parameters were then incorporated into a TCAD LED simulator to obtain the device terminal characteristics. The m-plane structure was found to exhibit higher spontaneous emission rate and improved (along with a delayed droop) internal quantum efficiency (IQE) characteristic.
{"title":"GaN/InGaN/GaN disk-in-wire light emitters: polar vs. nonpolar orientations","authors":"M. R. Nishat, S. Alqahtani, Y. Wu, V. Chimalgi, S. Ahmed","doi":"10.1109/IWCE.2015.7301936","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301936","url":null,"abstract":"In this paper, we computationally evaluate and compare the performance of recently reported In0.25Ga0.75N/GaN disk-in-wire light emitting diodes (LED) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic bandstructure and interband optical transition rates. The microscopically determined transition parameters were then incorporated into a TCAD LED simulator to obtain the device terminal characteristics. The m-plane structure was found to exhibit higher spontaneous emission rate and improved (along with a delayed droop) internal quantum efficiency (IQE) characteristic.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124620888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-13DOI: 10.1109/IWCE.2015.7301934
A. Afzalian, J. Huang, H. Ilatikhameneh, J. Charles, D. Lemus, J. Lopez, S. Perez Rubiano, T. Kubis, M. Povolotskyi, Gerhard Klimeck, M. Passlack, Y. Yeo
We explore here the suitability of a mode space tight binding algorithm to various III-V homo- and heterojunction nanowire devices. We show that in III-V materials, the number of unphysical modes to eliminate is very high compared to the Si case previously reported in the literature. Nevertheless, we demonstrate here the possibility to clean III-V mode space basis from the unphysical modes and achieve a significant speed up ratio (>150×), while keeping a very good accuracy (relative error lower than 1%) when using the algorithm for NEGF transport studies. Such results demonstrate the potential of mode space tight binding models and offer unprecedented possibilities for the full band simulation of nanostructures.
{"title":"Mode space tight binding model for ultra-fast simulations of III-V nanowire MOSFETs and heterojunction TFETs","authors":"A. Afzalian, J. Huang, H. Ilatikhameneh, J. Charles, D. Lemus, J. Lopez, S. Perez Rubiano, T. Kubis, M. Povolotskyi, Gerhard Klimeck, M. Passlack, Y. Yeo","doi":"10.1109/IWCE.2015.7301934","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301934","url":null,"abstract":"We explore here the suitability of a mode space tight binding algorithm to various III-V homo- and heterojunction nanowire devices. We show that in III-V materials, the number of unphysical modes to eliminate is very high compared to the Si case previously reported in the literature. Nevertheless, we demonstrate here the possibility to clean III-V mode space basis from the unphysical modes and achieve a significant speed up ratio (>150×), while keeping a very good accuracy (relative error lower than 1%) when using the algorithm for NEGF transport studies. Such results demonstrate the potential of mode space tight binding models and offer unprecedented possibilities for the full band simulation of nanostructures.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132088950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-03DOI: 10.1109/IWCE.2015.7301946
M. Claus, A. Fediai, S. Mothes, A. Pacheco, D. Ryndyk, S. Blawid, G. Cuniberti, M. Schroter
The authors studied the impact of contact materials on CNTFET behavior using multiscale modeling and simulation framework. A strong correlation between metal-CNT coupling strength, contact length and contact resistance was found. The atomistic simulation was used to adjust the contact model used within the transport studies at the device level.
{"title":"Multi-scale modeling of metal-CNT interfaces","authors":"M. Claus, A. Fediai, S. Mothes, A. Pacheco, D. Ryndyk, S. Blawid, G. Cuniberti, M. Schroter","doi":"10.1109/IWCE.2015.7301946","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301946","url":null,"abstract":"The authors studied the impact of contact materials on CNTFET behavior using multiscale modeling and simulation framework. A strong correlation between metal-CNT coupling strength, contact length and contact resistance was found. The atomistic simulation was used to adjust the contact model used within the transport studies at the device level.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132592889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301956
M. Elmessary, D. Nagy, M. Aldegunde, J. Lindberg, W. Dettmer, D. Peric, A. García-Loureiro, K. Kalna
We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental ID-VG characteristics of the 22 nm gate length GAA Si nanowire (NW) with excellent agreement at both low and high drain biases. We then scaled the Si GAA NW according to the ITRS specifications to a gate length of 10 nm. To show the effect of anisotropic QC on the ID-VG characteristics, we simulate two 8:1 nm gate length FinFETs, rectangular-like (REC) and triangular-like (TRI), with the <;100> and 〈100〉 channel orientations. The QC anisotropy effect is more pronounced in the 〈100〉 channel TRI device increasing the drain current by about 13% and slightly decreasing the current by 2% in the 〈100〉 channel REC device. However, the QC anisotropy has negligible effect in any device in the 〈100〉 orientation.
{"title":"Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors","authors":"M. Elmessary, D. Nagy, M. Aldegunde, J. Lindberg, W. Dettmer, D. Peric, A. García-Loureiro, K. Kalna","doi":"10.1109/IWCE.2015.7301956","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301956","url":null,"abstract":"We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental ID-VG characteristics of the 22 nm gate length GAA Si nanowire (NW) with excellent agreement at both low and high drain biases. We then scaled the Si GAA NW according to the ITRS specifications to a gate length of 10 nm. To show the effect of anisotropic QC on the ID-VG characteristics, we simulate two 8:1 nm gate length FinFETs, rectangular-like (REC) and triangular-like (TRI), with the <;100> and 〈100〉 channel orientations. The QC anisotropy effect is more pronounced in the 〈100〉 channel TRI device increasing the drain current by about 13% and slightly decreasing the current by 2% in the 〈100〉 channel REC device. However, the QC anisotropy has negligible effect in any device in the 〈100〉 orientation.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116811534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301947
M. Claus, D. Teich, S. Mothes, G. Seifert, M. Schroter
An important consideration in the design and reliability of circuits is the role of defects, impurities, and parameter fluctuations in affecting the transistor characteristics. Here, the impact of vacancies on CNTFET characteristics is studied by means of a multi-scale modeling and simulation framework. Very recently, defect densities of 0:02% up to 0:2% have been reported for different CNT samples. Therefore and in contrast to other simulation studies [1] at the device level, the impact of defects beyond the single defect limit is analyzed. Our atomistic simulation results suggest the developed defect model at the device level to be a reasonable approach. In addition, it has been shown that in contrast to a single defect, multiple defects lead to a larger variability of the device performance.
{"title":"Multiscale-modeling of CNTFETs with non-regular defect pattern","authors":"M. Claus, D. Teich, S. Mothes, G. Seifert, M. Schroter","doi":"10.1109/IWCE.2015.7301947","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301947","url":null,"abstract":"An important consideration in the design and reliability of circuits is the role of defects, impurities, and parameter fluctuations in affecting the transistor characteristics. Here, the impact of vacancies on CNTFET characteristics is studied by means of a multi-scale modeling and simulation framework. Very recently, defect densities of 0:02% up to 0:2% have been reported for different CNT samples. Therefore and in contrast to other simulation studies [1] at the device level, the impact of defects beyond the single defect limit is analyzed. Our atomistic simulation results suggest the developed defect model at the device level to be a reasonable approach. In addition, it has been shown that in contrast to a single defect, multiple defects lead to a larger variability of the device performance.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123912437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301978
M. Neupane
The placement of two dimensional (2D) materials such as hexagonal boron nitride (h-BN) and transition metal dichalcogenide (TMDC) at the forefront of materials and device research was pioneered by the discovery of graphene, an atomically thin 2D allotrope of carbon obtained through mechanical exfoliation. These 2D materials possess a wide range of electronic behaviors from insulator to metallic, resulting from their in-plane strong covalent bonds and their weaker out-of-plane coupling. The intrinsic bandgap of the semiconducting TMDCs makes them materials of choice for next-generation low-dimensional optical and electronic devices for defense and civilian applications. These 2D van der Waal (vdW) materials hold promise for a range of electronic, thermoelectric and optoelectronic devices such as field effect transistor (FET), light emitting device (LED), energy harvesting devices and ultrafast optical devices.
{"title":"Electronic and vibrational properties of 2D materials from monolayer to bulk","authors":"M. Neupane","doi":"10.1109/IWCE.2015.7301978","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301978","url":null,"abstract":"The placement of two dimensional (2D) materials such as hexagonal boron nitride (h-BN) and transition metal dichalcogenide (TMDC) at the forefront of materials and device research was pioneered by the discovery of graphene, an atomically thin 2D allotrope of carbon obtained through mechanical exfoliation. These 2D materials possess a wide range of electronic behaviors from insulator to metallic, resulting from their in-plane strong covalent bonds and their weaker out-of-plane coupling. The intrinsic bandgap of the semiconducting TMDCs makes them materials of choice for next-generation low-dimensional optical and electronic devices for defense and civilian applications. These 2D van der Waal (vdW) materials hold promise for a range of electronic, thermoelectric and optoelectronic devices such as field effect transistor (FET), light emitting device (LED), energy harvesting devices and ultrafast optical devices.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133315869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301951
S. Datta
The NEGF method was established in the 1960's through the classic work of Keldysh and others [1] using the methods of manybody perturbation theory (MBPT) and this approach is widely used in the literature [2]. By contrast I have introduced a different approach starting with the one-electron Schrödinger equation [3, 4] which is used by many in the nanoelectronics community. In this talk I will try to answer the questions I often get regarding the relation between the two approaches and I thank the organizers of the IWCE for giving me this opportunity.
{"title":"Non-equilibrium green's function (NEGF) method: a different perspective","authors":"S. Datta","doi":"10.1109/IWCE.2015.7301951","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301951","url":null,"abstract":"The NEGF method was established in the 1960's through the classic work of Keldysh and others [1] using the methods of manybody perturbation theory (MBPT) and this approach is widely used in the literature [2]. By contrast I have introduced a different approach starting with the one-electron Schrödinger equation [3, 4] which is used by many in the nanoelectronics community. In this talk I will try to answer the questions I often get regarding the relation between the two approaches and I thank the organizers of the IWCE for giving me this opportunity.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123854400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301966
H. Ilatikhameneh, Fan Chen, R. Rahman, Gerhard Klimeck
Gate controlled tunnel junctions wherein the PN-junction like potential profile is made by two gates with opposite polarities are currently dominant in the fabrication of 2D material devices. Electrical doping methods are also preferred in tunnel field-effect transistors (TFETs) as chemical doping introduces states within the bandgap of the semiconductor and therefore degrades the OFF-state performance of TFETs. Moreover, low band gap 2D materials are preferable for high performance TFETs. Consequently, bilayer graphene (BLG) TFET is studied in this work. The critical design parameters in the performance of low bandgap electrically doped 2D transistors are investigated here. Through atomistic simulations, it is shown that the key element in the performance of electrically gated junctions is the thickness of the oxide even when the top and bottom gates have different biases. But still the equivalent oxide thickness (EOT) cannot be disregarded completely since it determines the value of the electric field dependent band gap in BLG.
{"title":"Electrically doped 2D material tunnel transistor","authors":"H. Ilatikhameneh, Fan Chen, R. Rahman, Gerhard Klimeck","doi":"10.1109/IWCE.2015.7301966","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301966","url":null,"abstract":"Gate controlled tunnel junctions wherein the PN-junction like potential profile is made by two gates with opposite polarities are currently dominant in the fabrication of 2D material devices. Electrical doping methods are also preferred in tunnel field-effect transistors (TFETs) as chemical doping introduces states within the bandgap of the semiconductor and therefore degrades the OFF-state performance of TFETs. Moreover, low band gap 2D materials are preferable for high performance TFETs. Consequently, bilayer graphene (BLG) TFET is studied in this work. The critical design parameters in the performance of low bandgap electrically doped 2D transistors are investigated here. Through atomistic simulations, it is shown that the key element in the performance of electrically gated junctions is the thickness of the oxide even when the top and bottom gates have different biases. But still the equivalent oxide thickness (EOT) cannot be disregarded completely since it determines the value of the electric field dependent band gap in BLG.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125333811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301942
A. Chanana, S. Mahaptra, A. Sengupta
Here, we report the performance of vacancy affected supercell of a hybrid Graphene-Boron Nitride embedded armchair nanoribbon (a-GNR-BN) based n-MOSFET at its ballistic transport limit using Non Equilibrium Green's Function (NEGF) methodology. A supercell is made of the 3p configuration of armchair nanoribbon that is doped on the either side with 6 BN atoms and is also H-passivated. The type of vacancies studied are mono (B removal), di (B and N atom removal) and hole (removal of 6 atoms) formed all at the interface of carbon and BN atoms. Density Functional Theory (DFT) is employed to evaluate the material properties of this supercell like bandgap, effective mass and density of states (DOS). Further band gap and effective mass are utilized in self-consistent Poisson- Schrodinger calculator formalized using NEGF approach. For all the vacancy defects, material properties show a decrease which is more significant for hole defects. This observation is consistent in the device characteristics as well where ON-current (ION) and Sub Threshold Slope (SS) shows the maximum increment for hole vacancy and increase is more significant becomes when the number of defects increase.
{"title":"Analysis of vacancy defects in hybrid graphene-boron nitride armchair nanoribbon based n-MOSFET at ballistic limit","authors":"A. Chanana, S. Mahaptra, A. Sengupta","doi":"10.1109/IWCE.2015.7301942","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301942","url":null,"abstract":"Here, we report the performance of vacancy affected supercell of a hybrid Graphene-Boron Nitride embedded armchair nanoribbon (a-GNR-BN) based n-MOSFET at its ballistic transport limit using Non Equilibrium Green's Function (NEGF) methodology. A supercell is made of the 3p configuration of armchair nanoribbon that is doped on the either side with 6 BN atoms and is also H-passivated. The type of vacancies studied are mono (B removal), di (B and N atom removal) and hole (removal of 6 atoms) formed all at the interface of carbon and BN atoms. Density Functional Theory (DFT) is employed to evaluate the material properties of this supercell like bandgap, effective mass and density of states (DOS). Further band gap and effective mass are utilized in self-consistent Poisson- Schrodinger calculator formalized using NEGF approach. For all the vacancy defects, material properties show a decrease which is more significant for hole defects. This observation is consistent in the device characteristics as well where ON-current (ION) and Sub Threshold Slope (SS) shows the maximum increment for hole vacancy and increase is more significant becomes when the number of defects increase.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124282901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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