Multi-scale modeling of metal-CNT interfaces

M. Claus, A. Fediai, S. Mothes, A. Pacheco, D. Ryndyk, S. Blawid, G. Cuniberti, M. Schroter
{"title":"Multi-scale modeling of metal-CNT interfaces","authors":"M. Claus, A. Fediai, S. Mothes, A. Pacheco, D. Ryndyk, S. Blawid, G. Cuniberti, M. Schroter","doi":"10.1109/IWCE.2015.7301946","DOIUrl":null,"url":null,"abstract":"The authors studied the impact of contact materials on CNTFET behavior using multiscale modeling and simulation framework. A strong correlation between metal-CNT coupling strength, contact length and contact resistance was found. The atomistic simulation was used to adjust the contact model used within the transport studies at the device level.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Workshop on Computational Electronics (IWCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2015.7301946","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The authors studied the impact of contact materials on CNTFET behavior using multiscale modeling and simulation framework. A strong correlation between metal-CNT coupling strength, contact length and contact resistance was found. The atomistic simulation was used to adjust the contact model used within the transport studies at the device level.
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金属-碳纳米管界面的多尺度建模
作者采用多尺度建模和仿真框架研究了接触材料对CNTFET行为的影响。金属-碳纳米管耦合强度、接触长度和接触电阻之间存在很强的相关性。原子模拟用于调整在设备级传输研究中使用的接触模型。
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