Use of halide transport in epitaxial growth of InP and related compounds

Abstract

Summary form only given. In this paper methods and results in InP (and related compounds) growth practice are reviewed, classified and summarised on the basis of the recent literature. The aim is to show the present place and role of halogen transport in epitaxial growth. In the case of InP the importance of the classical hydride method is still high. Though MOVPE technique dominates in the case of growth of compounds with In content, atomic layer epitaxy and selective area growth are successful with auxiliary application of halogen transport. Chlorine assisted MOVPE has an increasing role.