{"title":"New interpretation of threshold voltage in polysilicon TFTs: a theoretical and experimental study","authors":"M. Jacunski, M. Shur, M. Hack","doi":"10.1109/DRC.1995.496310","DOIUrl":null,"url":null,"abstract":"Discusses the extraction of threshold voltage for n and p channel polysilicon thin film transistors. First, the effect of measurement frequency is investigated, both experimentally and via 2D numerical device simulation. The temporal characteristics ofthe boundary traps are shown to cause a significant positive (negative) shift of the gate to channel capacitance curve for n-channel (p-channel) TFTs as a function of frequency.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496310","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Discusses the extraction of threshold voltage for n and p channel polysilicon thin film transistors. First, the effect of measurement frequency is investigated, both experimentally and via 2D numerical device simulation. The temporal characteristics ofthe boundary traps are shown to cause a significant positive (negative) shift of the gate to channel capacitance curve for n-channel (p-channel) TFTs as a function of frequency.
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