A 140 GHz f/sub max/ InAlAs/InGaAs pulse-doped InGaAlAs quaternary collector HBT with a 20 V BVceo

J. Cowles, L. Tran, T. Block, D. Streit, A. Oki
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引用次数: 6

Abstract

Although InP-based HBTs have shown excellent RF performance, the low breakdown and Early voltages of InGaAs collectors have limited their insertion into high linearity and power amplifiers. InAlAs/InGaAs NpN double-HBTs with compositionally graded quaternary InGaAlAs collectors realized a high BVceo of 20V with minimal carrier blocking up to high current densities. The same device exhibited an ft and fmax of 58 GHz and 140 GHz, respectively, which is comparable to otherwise identical InGaAs collector devices.
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带20 V BVceo的140 GHz f/sub max/ InAlAs/InGaAs脉冲掺杂InGaAlAs四元集电极HBT
尽管基于inp的hbt表现出优异的射频性能,但InGaAs集电极的低击穿和早期电压限制了它们在高线性和功率放大器中的应用。InAlAs/InGaAs NpN双hbts具有组成梯度的四元InGaAlAs集电极,实现了20V的高BVceo,载流子阻塞最小,达到高电流密度。同一器件的ft和fmax分别为58 GHz和140 GHz,这与其他相同的InGaAs收集器器件相当。
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Intrinsic oscillations in resonant tunneling structures New interpretation of threshold voltage in polysilicon TFTs: a theoretical and experimental study New generation of organic-based thin-film transistors Monolithic integration of a 94 GHz AlGaAs/GaAs 2DEG mixer on quartz substrate by epitaxial lift-off A 140 GHz f/sub max/ InAlAs/InGaAs pulse-doped InGaAlAs quaternary collector HBT with a 20 V BVceo
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