R. Liou, T. Cheng, Chung-I Chang, Tings Wang, S. Fu, T. Dziura
{"title":"Feasibility of measuring four profile parameters for metal-0 trench of DRAM by spectroscopic ellipsometry based profile technology","authors":"R. Liou, T. Cheng, Chung-I Chang, Tings Wang, S. Fu, T. Dziura","doi":"10.1109/SMTW.2004.1393754","DOIUrl":null,"url":null,"abstract":"The feasibility of measuring four profile parameters, i.e,, total etch depth, critical dimension (CD), thickness of remaining poly hard mask, and sidewall angle, for the metal-0 trench of DRAM by a single technique was investigated in this study. Broadband spectroscopic ellipsometry was used to provide non-destructive profile information. The results prove its capability for providing the required profile information, traditionally measured on 4 different metrology tools, by a single measurement. This capability could significantly simplify the process flow for metal-0 trench.","PeriodicalId":369092,"journal":{"name":"2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMTW.2004.1393754","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The feasibility of measuring four profile parameters, i.e,, total etch depth, critical dimension (CD), thickness of remaining poly hard mask, and sidewall angle, for the metal-0 trench of DRAM by a single technique was investigated in this study. Broadband spectroscopic ellipsometry was used to provide non-destructive profile information. The results prove its capability for providing the required profile information, traditionally measured on 4 different metrology tools, by a single measurement. This capability could significantly simplify the process flow for metal-0 trench.
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