{"title":"Selectivity investigation of HfO/sub 2/ to oxide using wet etching","authors":"T. Kang, Chih-Cheng Wang, B. Tsui, Yuan-Hsin Li","doi":"10.1109/SMTW.2004.1393729","DOIUrl":null,"url":null,"abstract":"Experiments indicate that higher HfO/sub 2//oxide etching selectivity in IPA/HF solution as compared to DI water/HF solution. Although DI water/HF solution is acceptable for some HfO/sub 2/ and CVD oxide films, from an integration point of view, the process window is smaller than IPA/HF solution. It is believed that adequately damaged HfO/sub 2/ and annealed CVD oxides will result in considerably high HfO/sub 2//CVD oxide etching selectivity in IPA/HF solution.","PeriodicalId":369092,"journal":{"name":"2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMTW.2004.1393729","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
Experiments indicate that higher HfO/sub 2//oxide etching selectivity in IPA/HF solution as compared to DI water/HF solution. Although DI water/HF solution is acceptable for some HfO/sub 2/ and CVD oxide films, from an integration point of view, the process window is smaller than IPA/HF solution. It is believed that adequately damaged HfO/sub 2/ and annealed CVD oxides will result in considerably high HfO/sub 2//CVD oxide etching selectivity in IPA/HF solution.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
