A 240 GHz direct conversion IQ receiver in 0.13 μm SiGe BiCMOS technology

M. Elkhouly, Y. Mao, S. Glisic, C. Meliani, F. Ellinger, J. Scheytt
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引用次数: 33

Abstract

A 240 GHz direct conversion IQ receiver manufactured in 0.13 SiGe BiCMOS technology with fT/fmax of 300/500 GHz is presented. The receiver consists of a four stage LNA, an active power divider, an LO IQ generation network, and direct down-conversion fundamental mixers. The integrated IQ receiver yields a conversion gain of 18 dB, an 18 dB simulated DSB NF, and a 3 dB bandwidth of 25 GHz. The required 245 GHz LO power is in the order of -10 dBm. The receiver exhibits an IQ amplitude and phase imbalance of 1 dB and 3° respectively. It draws 135 mA from the 3.5 V supply and 20 mA from 2 V.
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采用0.13 μm SiGe BiCMOS技术的240 GHz直接转换IQ接收机
提出了一种采用0.13 SiGe BiCMOS技术制造的240 GHz直接转换IQ接收机,fT/fmax为300/500 GHz。接收机由四级LNA、有源功率分配器、LO IQ生成网络和直接下变频基频混频器组成。集成IQ接收器的转换增益为18 dB,模拟DSB NF为18 dB,带宽为25 GHz,为3 dB。所需的245ghz本路功率约为- 10dbm。接收机的IQ振幅和相位失衡分别为1 dB和3°。它从3.5 V电源吸取135 mA,从2 V吸取20 mA。
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A Ka-Band doherty power amplifier with 25.1 dBm output power, 38% peak PAE and 27% back-off PAE A 240 GHz direct conversion IQ receiver in 0.13 μm SiGe BiCMOS technology A linear-in-dB analog baseband circuit for low power 60GHz receiver in standard 65nm CMOS A highly selective LNTA capable of large-signal handling for RF receiver front-ends A 0.5GHz–1.5GHz order scalable harmonic rejection mixer
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