{"title":"Comprehensive analysis of deformation of interfacial micro-nano structure by applied force in triboelectric energy harvester","authors":"Myeong-Lok Seol, Jin-woo Han, Jong-Ho Woo, Dong-il Moon, Jee-Yeon Kim, Yang-Kyu Choi","doi":"10.1109/IEDM.2014.7047010","DOIUrl":null,"url":null,"abstract":"The correlation between the deformation of an interfacial micro-nano structure and the applied pressure in a triboelectric energy harvester (TEH) is analyzed for the first time. The modeling, simulation, visualization experiment, and electrical measurements are conducted in order to clarify the effects of the structural deformation, which governs the triboelectric charge density. The results imply that a small-sized structure is advantageous in output power, while a large-sized structure is advantageous in the pressure sensing range.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2014.7047010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The correlation between the deformation of an interfacial micro-nano structure and the applied pressure in a triboelectric energy harvester (TEH) is analyzed for the first time. The modeling, simulation, visualization experiment, and electrical measurements are conducted in order to clarify the effects of the structural deformation, which governs the triboelectric charge density. The results imply that a small-sized structure is advantageous in output power, while a large-sized structure is advantageous in the pressure sensing range.
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