NBTI of Ge pMOSFETs: Understanding defects and enabling lifetime prediction

Abstract

Conventional lifetime prediction method developed for Si is inapplicable to Ge devices. This work demonstrates that the defects are different in Ge and Si devices. Based on the investigation of defect difference, for the first time, a method is developed for Ge devices to restore the power law for NBTI kinetics, enabling lifetime prediction. This method is applicable for both GeO2/Ge and Sicap/Ge devices, assisting in further Ge process/device optimization.