{"title":"Hot carrier injection on back biasing double-gate FinFET with 10 and 25-nm fin width","authors":"W. Chang, Li-Gong Cin, W. Yeh, Po-Ying Chen","doi":"10.1109/IPFA.2014.6898122","DOIUrl":null,"url":null,"abstract":"The effects of hot carrier injection on double-gate FinFETs with fin widths (Wfin) of 10 and 25 nm with positive and negative back biases are compared in this study. The FinFETs with a positive bias and narrow Wfin exhibit a large current tuning range but experiences high degradation after stress. By contrast, a negative back bias alleviates degradation but also eliminates the drive current.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898122","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The effects of hot carrier injection on double-gate FinFETs with fin widths (Wfin) of 10 and 25 nm with positive and negative back biases are compared in this study. The FinFETs with a positive bias and narrow Wfin exhibit a large current tuning range but experiences high degradation after stress. By contrast, a negative back bias alleviates degradation but also eliminates the drive current.
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