Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898162
D. Wang, P. K. Tan, Maggie Yamin Huang, J. Lam, Z. Mai
By the gas-assisted focused ion beam (FIB) method, we de-process the device from top layer to bottom layer. It is a highly efficient failure analysis method on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive X-ray spectroscopy and FTIR analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB de-layering open up a new insight avenue for the failure analysis in IC devices.
{"title":"Structure and composition of the Cu/low k interconnects de-layered with FIB","authors":"D. Wang, P. K. Tan, Maggie Yamin Huang, J. Lam, Z. Mai","doi":"10.1109/IPFA.2014.6898162","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898162","url":null,"abstract":"By the gas-assisted focused ion beam (FIB) method, we de-process the device from top layer to bottom layer. It is a highly efficient failure analysis method on the precise location. After removing the dielectric layers under the bombardment of an ion beam, the chemical composition of the top layer was altered with the reduced oxygen content. Further energy-dispersive X-ray spectroscopy and FTIR analysis revealed that the oxygen reduction lead to appreciable silicon suboxide formation. Our findings with structural and composition alteration of dielectric layer after FIB de-layering open up a new insight avenue for the failure analysis in IC devices.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121094883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898153
Chen Yixin, Hao Meng, Shao Jingjing, L. Esther, Khoo Bing Sheng, Chooi Meailing, Li Kai, Xing Qiuju, Kon Cambridge, Lee Hwang Sheng, Shen Yiqiang, Song Lu, Xing Zhenxiang, Zhou Yongkai, Feng Yang, Fu Chao, H. Younan, Li Xiaomin
White haze or the so called mura effect has been recognized as a common defect in touch panels. Nevertheless, the underlying mechanism has not been fully understood and clearly investigated. In this study, a comprehensive characterization study using the ATR-FTIR, DUAL BEAM FIB-SEM, TEM and TOF-SIMS on the high temperature and moisture induced white haze, which follows the pattern of electrodes in touch panels, is first reported. It is suspected that the white haze is a moisture induced reflection alteration phenomenon of the OCA (optically clear adhesive), while the electrodes related pattern is highly dependent on the local variation in hygroscopic swelling.
{"title":"ATR-FTIR, DUAL BEAM FIB-SEM, TEM and TOF-SIMS studies on high temperature and moisture induced “white haze” following the pattern of electrodes in touch panels","authors":"Chen Yixin, Hao Meng, Shao Jingjing, L. Esther, Khoo Bing Sheng, Chooi Meailing, Li Kai, Xing Qiuju, Kon Cambridge, Lee Hwang Sheng, Shen Yiqiang, Song Lu, Xing Zhenxiang, Zhou Yongkai, Feng Yang, Fu Chao, H. Younan, Li Xiaomin","doi":"10.1109/IPFA.2014.6898153","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898153","url":null,"abstract":"White haze or the so called mura effect has been recognized as a common defect in touch panels. Nevertheless, the underlying mechanism has not been fully understood and clearly investigated. In this study, a comprehensive characterization study using the ATR-FTIR, DUAL BEAM FIB-SEM, TEM and TOF-SIMS on the high temperature and moisture induced white haze, which follows the pattern of electrodes in touch panels, is first reported. It is suspected that the white haze is a moisture induced reflection alteration phenomenon of the OCA (optically clear adhesive), while the electrodes related pattern is highly dependent on the local variation in hygroscopic swelling.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127139721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898144
D. Donnet, O. Sidorov, P. Carleson, C. Rue, R. Alvis, S. Madala
Good control over beam and chemistry conditions are required to enable uniform delayering of advanced process technologies in the FIB. The introduction of newer, thinner and more beam sensitive materials have made delayering more complicated. We shall introduce a new chemistry for device delayering and present results from both Ga and Xe ion beams showing its improvement over existing chemistries.
{"title":"Localized FIB delayering on advanced process technologies","authors":"D. Donnet, O. Sidorov, P. Carleson, C. Rue, R. Alvis, S. Madala","doi":"10.1109/IPFA.2014.6898144","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898144","url":null,"abstract":"Good control over beam and chemistry conditions are required to enable uniform delayering of advanced process technologies in the FIB. The introduction of newer, thinner and more beam sensitive materials have made delayering more complicated. We shall introduce a new chemistry for device delayering and present results from both Ga and Xe ion beams showing its improvement over existing chemistries.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116219109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898173
Dnyan Khatri, S. Lim, M. Ho, V. Narang, Dakshina-Murthy Srikanteswara, K. Kasprak
With rapid developments in semiconductor manufacturing technologies, new and more complicated challenges emerge in the Failure Analysis space. It has been a challenge to perform failure analysis for voltage-sensitive soft failures, especially those occurring in SRAM circuitries. However, fault localization in sub-micron devices is successful if existing FA techniques are innovatively and extensively leveraged during physical fault isolation. This paper emphasizes the use of SEM-based nano-probing followed by advanced TEM techniques to successfully identify the root cause of failure, thus enabling the wafer fab to take appropriate corrective measures to mitigate such failures. A successful case study involving these techniques will also be discussed.
{"title":"Resolving systematic voltage sensitive soft failures in 28nm microprocessor devices","authors":"Dnyan Khatri, S. Lim, M. Ho, V. Narang, Dakshina-Murthy Srikanteswara, K. Kasprak","doi":"10.1109/IPFA.2014.6898173","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898173","url":null,"abstract":"With rapid developments in semiconductor manufacturing technologies, new and more complicated challenges emerge in the Failure Analysis space. It has been a challenge to perform failure analysis for voltage-sensitive soft failures, especially those occurring in SRAM circuitries. However, fault localization in sub-micron devices is successful if existing FA techniques are innovatively and extensively leveraged during physical fault isolation. This paper emphasizes the use of SEM-based nano-probing followed by advanced TEM techniques to successfully identify the root cause of failure, thus enabling the wafer fab to take appropriate corrective measures to mitigate such failures. A successful case study involving these techniques will also be discussed.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126280676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898136
Li Tian
As is known to all, we could capture clearer infrared (IR) image from backside as Si substrate was thinner. But if we needed higher resolution image with conventional optical objective lens, we must introduce numerical aperture increasing lens(NAIL) technology or shorter wavelength light to improve numerical aperture (NA) in objective space. Now some vendors can provide NanoLens with NAIL but it is very expensive. In this paper, we proposed one simple and novel system of NAIL. Firstly, we fabricated two NAILs (one R≈3mm, the other R≈ 5mm) with glass material, and captured higher resolution IR image with NAIL help. Secondly, we found clearer image from smaller size NAIL by comparing IR images. Then, we studied how to moving NAIL on backside surface of die. Two moving methods were designed and we discussed their advantage and disadvantage, one of them was used in FA experiment. Although there were some limitation and disadvantage for this system, we believed this simple, novel and low cost NAIL system was beneficial to our FA from backside.
{"title":"Simple, novel and low cost numerical aperture increasing lens system for high resolution infrared image in backside failure analysis","authors":"Li Tian","doi":"10.1109/IPFA.2014.6898136","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898136","url":null,"abstract":"As is known to all, we could capture clearer infrared (IR) image from backside as Si substrate was thinner. But if we needed higher resolution image with conventional optical objective lens, we must introduce numerical aperture increasing lens(NAIL) technology or shorter wavelength light to improve numerical aperture (NA) in objective space. Now some vendors can provide NanoLens with NAIL but it is very expensive. In this paper, we proposed one simple and novel system of NAIL. Firstly, we fabricated two NAILs (one R≈3mm, the other R≈ 5mm) with glass material, and captured higher resolution IR image with NAIL help. Secondly, we found clearer image from smaller size NAIL by comparing IR images. Then, we studied how to moving NAIL on backside surface of die. Two moving methods were designed and we discussed their advantage and disadvantage, one of them was used in FA experiment. Although there were some limitation and disadvantage for this system, we believed this simple, novel and low cost NAIL system was beneficial to our FA from backside.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"461 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115767309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898160
Ying Li, F. Zhu, Yanming Chen, K. Duan, Kai Tang, Sheng Liu
The paper investigates the insertion force and contact reliability of N electric connector. A finite element model (FEM) of the contacts was created and simulation of the contact force was completed by ANSYS. Impact of the friction coefficient, shrink range, length of socket, and groove width on the insertion force was analyzed by changing the structural parameters. Variation curves of the insertion force for different structural parameters were studied. Simulation results showed that the shrink range and length of socket have a great influence on the insertion force. In contrast, the friction coefficient and groove width have a much smaller effect on the contact resistance of N electric connector. The optimized connector structure reduces the contact resistance and improves the contact reliability.
{"title":"Analysis of insertion force of electric connector based on FEM","authors":"Ying Li, F. Zhu, Yanming Chen, K. Duan, Kai Tang, Sheng Liu","doi":"10.1109/IPFA.2014.6898160","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898160","url":null,"abstract":"The paper investigates the insertion force and contact reliability of N electric connector. A finite element model (FEM) of the contacts was created and simulation of the contact force was completed by ANSYS. Impact of the friction coefficient, shrink range, length of socket, and groove width on the insertion force was analyzed by changing the structural parameters. Variation curves of the insertion force for different structural parameters were studied. Simulation results showed that the shrink range and length of socket have a great influence on the insertion force. In contrast, the friction coefficient and groove width have a much smaller effect on the contact resistance of N electric connector. The optimized connector structure reduces the contact resistance and improves the contact reliability.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130787190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898191
J. Gaudestad, A. Orozco, M. Kimball, K. Gopinadhan, T. Venkatesan
Magnetic Current Imaging (MCI) has been used for more than a decade to localize shorts and leakages in packages non-destructively. Now that packages are becoming more complex with multiple dies inside the same package, MCI is showing its effectiveness in localizing these complicated shorts non-destructively when the Failure Analysis (FA) engineer does not know from Automated Test Equipment (ATE) if the fault location is in the die or package or which die. We show in this paper that the FA lab can be simplified by the introduction of MCI as a one stop Fault Isolation (FI) tool for all shorts and leakages.
{"title":"Short localization in a multi chip BGA package","authors":"J. Gaudestad, A. Orozco, M. Kimball, K. Gopinadhan, T. Venkatesan","doi":"10.1109/IPFA.2014.6898191","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898191","url":null,"abstract":"Magnetic Current Imaging (MCI) has been used for more than a decade to localize shorts and leakages in packages non-destructively. Now that packages are becoming more complex with multiple dies inside the same package, MCI is showing its effectiveness in localizing these complicated shorts non-destructively when the Failure Analysis (FA) engineer does not know from Automated Test Equipment (ATE) if the fault location is in the die or package or which die. We show in this paper that the FA lab can be simplified by the introduction of MCI as a one stop Fault Isolation (FI) tool for all shorts and leakages.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131264007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898177
Y. Wang, Guangyi Lu, Lizhong Zhang, Jian Cao, S. Jia, Xing Zhang
Four-terminal and three-terminal asymmetrical n-type LDMOS (asym-nLDMOS) devices are investigated in 0.18μm 40V SOI BCD technology. To improve normal asym-nLDMOS devices ESD robustness, an additional p-sink implant is added beneath their source/drain diffusion regions. Transmission line pulse measured results show that the novel asym-nLDMOS devices have a suitable triggering voltage and 30-48% improvement of second breakdown current.
采用0.18μm 40V SOI BCD技术，研究了四端和三端非对称n型LDMOS器件。为了提高普通非对称nldmos器件的ESD稳健性，在其源/漏扩散区域下方添加了一个额外的p-sink植入物。传输线脉冲测量结果表明，新型非对称nldmos器件具有合适的触发电压，二次击穿电流提高30-48%。
{"title":"Comprehensive study and corresponding improvements on the ESD robustness of different nLDMOS devices","authors":"Y. Wang, Guangyi Lu, Lizhong Zhang, Jian Cao, S. Jia, Xing Zhang","doi":"10.1109/IPFA.2014.6898177","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898177","url":null,"abstract":"Four-terminal and three-terminal asymmetrical n-type LDMOS (asym-nLDMOS) devices are investigated in 0.18μm 40V SOI BCD technology. To improve normal asym-nLDMOS devices ESD robustness, an additional p-sink implant is added beneath their source/drain diffusion regions. Transmission line pulse measured results show that the novel asym-nLDMOS devices have a suitable triggering voltage and 30-48% improvement of second breakdown current.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115449902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898139
Lei Zhu, M. Bai, X. P. Wang, Y. H. Huang, K. Ong, A. Sumarlina, W. Park, Z. Mo, Peck Y. Zheng, S. P. Zhao, J. Lam
A Power MOSFET Idss failure case was studied by SIMS profiling that showed a deeper junction depth between the body/source. TCAD simulation was used to understand the mechanism of the failure.
{"title":"Idss failure investigated by SIMS profiling and TCAD simulation","authors":"Lei Zhu, M. Bai, X. P. Wang, Y. H. Huang, K. Ong, A. Sumarlina, W. Park, Z. Mo, Peck Y. Zheng, S. P. Zhao, J. Lam","doi":"10.1109/IPFA.2014.6898139","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898139","url":null,"abstract":"A Power MOSFET Idss failure case was studied by SIMS profiling that showed a deeper junction depth between the body/source. TCAD simulation was used to understand the mechanism of the failure.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116851622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-09-18DOI: 10.1109/IPFA.2014.6898198
A. Quah, N. Dayanand, S. Neo, G. Ang, M. Gunaw Ardana, H. H. Ma, Z. H. Mai, J. Lam
This paper describes several case studies which used a combination of laser induced techniques, photon emission microscopy and layout analysis, together with the identification of common failure signatures that are associated with CMP under-polish, for the effective localization of thin and ultra-thin Ta barrier residue in the backend of line Cu metallization stack.
{"title":"Failure analysis methodology for the localization of thin and ultra-thin metal barrier residue","authors":"A. Quah, N. Dayanand, S. Neo, G. Ang, M. Gunaw Ardana, H. H. Ma, Z. H. Mai, J. Lam","doi":"10.1109/IPFA.2014.6898198","DOIUrl":"https://doi.org/10.1109/IPFA.2014.6898198","url":null,"abstract":"This paper describes several case studies which used a combination of laser induced techniques, photon emission microscopy and layout analysis, together with the identification of common failure signatures that are associated with CMP under-polish, for the effective localization of thin and ultra-thin Ta barrier residue in the backend of line Cu metallization stack.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129390380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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