TID Effects on Soft-breakdown and Self-heating Characteristics of 400V SOI NLDMOSFETs

Lei Shu, Liang Wang, Xin Zhou, Yuan Li, Tongde Li, Zhangyi’an Yuan, Cheng-Long Sui, Yuanfu Zhao
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引用次数: 5

Abstract

The soft breakdown (SBD) characteristic and self-heating effect (SHE) suppression of 400V SOI NLDMOSFETs after irradiation under different bias conditions is discovered through experiments. The mechanisms for these phenomena are analysed and confirmed by TCAD simulations.
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TID对400V SOI nldmosfet软击穿和自热特性的影响
通过实验发现400V SOI nldmosfet在不同偏置条件下辐照后的软击穿(SBD)特性和自热效应抑制(SHE)。对这些现象的机理进行了分析,并通过TCAD模拟加以证实。
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The RADECS 2018 Topical Day (Short Courses) TID Effects on Soft-breakdown and Self-heating Characteristics of 400V SOI NLDMOSFETs Issues and Special Aspects of Electronic Component Flight Test Results Usage for Radiation Hardness Confirmation ELDRS in p-MOS and p-MNOS Based RAD-FETs with Thick Gate Insulators: Experiment and Simulation RADECS 2018 Technical Program Chair Address
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