Issues and Special Aspects of Electronic Component Flight Test Results Usage for Radiation Hardness Confirmation

G. Protopopov, V. Anashin, N. Balykina, A. Repin, V. Denisova, A. V. Tsurgaev
{"title":"Issues and Special Aspects of Electronic Component Flight Test Results Usage for Radiation Hardness Confirmation","authors":"G. Protopopov, V. Anashin, N. Balykina, A. Repin, V. Denisova, A. V. Tsurgaev","doi":"10.1109/RADECS45761.2018.9328693","DOIUrl":null,"url":null,"abstract":"Issues of electronic component flight test results usage are shown in the paper using onboard measurements of space radiation environments in different orbits.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS45761.2018.9328693","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Issues of electronic component flight test results usage are shown in the paper using onboard measurements of space radiation environments in different orbits.
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用于辐射硬度确认的电子元件飞行试验结果的问题和特殊方面
通过对不同轨道空间辐射环境的机载测量,指出了电子元件飞行试验结果使用的问题。
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