Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328656
Y. Morilla, P. Martín-Holgado, A. Romero, J. Labrador, B. Fernández, J. Praena, A. Lindoso, M. García-Valderas, M. Peña-Fernandez, L. Entrena
The development of some Spanish national research projects has contributed to improve CNA capabilities to perform irradiation testing for aerospace applications. An overview on the Centre evolution during the last years will be presented. A particular study on current capability to perform fault injection campaigns on a microprocessor, first time using both proton and neutron beamlines, will be shown in this work.
{"title":"Progress of CNA to become the Spanish facility for combined irradiation testing in aerospace","authors":"Y. Morilla, P. Martín-Holgado, A. Romero, J. Labrador, B. Fernández, J. Praena, A. Lindoso, M. García-Valderas, M. Peña-Fernandez, L. Entrena","doi":"10.1109/RADECS45761.2018.9328656","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328656","url":null,"abstract":"The development of some Spanish national research projects has contributed to improve CNA capabilities to perform irradiation testing for aerospace applications. An overview on the Centre evolution during the last years will be presented. A particular study on current capability to perform fault injection campaigns on a microprocessor, first time using both proton and neutron beamlines, will be shown in this work.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115372105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328673
T. Borel, A. Michez, S. Furic, E. Leduc, J. Boch, A. Touboul, B. Azais, S. Danzeca, L. Dusseau
ESD (electrostatic discharges) is one of the most critical event leading most of the time to the destruction of integrated circuits. Nowadays, most of the integrated circuits are design with inbuilt ESD protections structures that have to be electrically neutral. TID degradation on Gate Grounded nMOSFETs is investigated in this paper. Degradation hypothesis and structure analysis performed on GGnMOS from Microchip have highlighted some possible failure that can lead to an inability to protect properly an integrated circuit, or to an increase of the leakage current of those structure.
{"title":"Gate Grounded n-MOS Sensibility to Ionizing Dose","authors":"T. Borel, A. Michez, S. Furic, E. Leduc, J. Boch, A. Touboul, B. Azais, S. Danzeca, L. Dusseau","doi":"10.1109/RADECS45761.2018.9328673","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328673","url":null,"abstract":"ESD (electrostatic discharges) is one of the most critical event leading most of the time to the destruction of integrated circuits. Nowadays, most of the integrated circuits are design with inbuilt ESD protections structures that have to be electrically neutral. TID degradation on Gate Grounded nMOSFETs is investigated in this paper. Degradation hypothesis and structure analysis performed on GGnMOS from Microchip have highlighted some possible failure that can lead to an inability to protect properly an integrated circuit, or to an increase of the leakage current of those structure.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117125413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328687
G. Rodrigues, F. Kastensmidt, V. Pouget, A. Bosio
This work proposes the use of Triple Modular Redundancy (TMR) to mitigate multiple bit upsets affecting embedded software. To reduce the TMR's overhead, we propose to exploit approximate computing paradigm and, more in particular, the so-called successive approximations technique. The proposed approach, called Approximate TMR (ATMR), leverages the nature of successive approximation technique to improve fault masking. Successive approximation algorithms are based on loop computations that approximate to a final result on each iteration. By varying the number of iterations, one can observe differences in the fault masking and execution time. Therefore, a trade-off has to be identified between the number of iterations (i.e., the degree of the approximation) in the ATMR and its capability on correcting errors. A set of algorithms were implemented as embedded software in the ARM Cortex A9 processor of Xilinx Zynq-7000 series board. Experiments consist of exposing the finned processor to laser pulses at the data cache memory area provoking bit-flips. Results show that the ATMR approach decreases the execution time overhead compared to the classical TMR while keeping an acceptable fault masking rate.
{"title":"Approximate TMR Based on Successive Approximation to Protect Against Multiple Bit Upset in Microprocessors","authors":"G. Rodrigues, F. Kastensmidt, V. Pouget, A. Bosio","doi":"10.1109/RADECS45761.2018.9328687","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328687","url":null,"abstract":"This work proposes the use of Triple Modular Redundancy (TMR) to mitigate multiple bit upsets affecting embedded software. To reduce the TMR's overhead, we propose to exploit approximate computing paradigm and, more in particular, the so-called successive approximations technique. The proposed approach, called Approximate TMR (ATMR), leverages the nature of successive approximation technique to improve fault masking. Successive approximation algorithms are based on loop computations that approximate to a final result on each iteration. By varying the number of iterations, one can observe differences in the fault masking and execution time. Therefore, a trade-off has to be identified between the number of iterations (i.e., the degree of the approximation) in the ATMR and its capability on correcting errors. A set of algorithms were implemented as embedded software in the ARM Cortex A9 processor of Xilinx Zynq-7000 series board. Experiments consist of exposing the finned processor to laser pulses at the data cache memory area provoking bit-flips. Results show that the ATMR approach decreases the execution time overhead compared to the classical TMR while keeping an acceptable fault masking rate.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125932346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328668
P. Caron, C. Inguimbert, L. Artola, R. Ecoffet, F. Bezerra
The sensitivity of memory devices under proton irradiation has been extensively studied over the years. Two main mechanisms has been identified to drive the SEU sensitivity in last generation of devices: direct ionization for low proton energies and inelastic nuclear reactions for higher proton energies. This paper demonstrates that in some cases, the Coulomb elastic interaction can no longer be neglected and becomes dominant in a certain range of energy. It is also demonstrated that the relative contribution of this mechanism is dependent on the structure environment (overlayers).
{"title":"About physical mechanisms inducing proton Single Event Upset in integrated memory devices","authors":"P. Caron, C. Inguimbert, L. Artola, R. Ecoffet, F. Bezerra","doi":"10.1109/RADECS45761.2018.9328668","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328668","url":null,"abstract":"The sensitivity of memory devices under proton irradiation has been extensively studied over the years. Two main mechanisms has been identified to drive the SEU sensitivity in last generation of devices: direct ionization for low proton energies and inelastic nuclear reactions for higher proton energies. This paper demonstrates that in some cases, the Coulomb elastic interaction can no longer be neglected and becomes dominant in a certain range of energy. It is also demonstrated that the relative contribution of this mechanism is dependent on the structure environment (overlayers).","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126088549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328733
Robert A. Johnson, A. Witulski, D. Ball, K. Galloway, A. Sternberg, E. Zhang, R. Reed, peixiong zhao, J. Lauenstein, A. Javanainen
A two-photon absorption technique is explored for Silicon carbide power MOSFETs and power junction barrier Schottky diodes using a pulsed laser. The similarities in design between the specific MOSFETs and diodes tested permit using mechanisms existing in the different structures as explanation for observed current variation with laser position. The diode shows variation in average current with change in laser depth only, whereas the MOSFET shows variation both with shifts in depth and shifts in position across the striped geometry of the device. The variation is explained to be due to bipolar amplification of the charge carriers generated in the MOSFET when a pulse focus includes a channel below a gate. This conclusion is then reinforced using results from prior heavy ion and simulation work done for similar Silicon carbide MOSFETs.
{"title":"Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment","authors":"Robert A. Johnson, A. Witulski, D. Ball, K. Galloway, A. Sternberg, E. Zhang, R. Reed, peixiong zhao, J. Lauenstein, A. Javanainen","doi":"10.1109/RADECS45761.2018.9328733","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328733","url":null,"abstract":"A two-photon absorption technique is explored for Silicon carbide power MOSFETs and power junction barrier Schottky diodes using a pulsed laser. The similarities in design between the specific MOSFETs and diodes tested permit using mechanisms existing in the different structures as explanation for observed current variation with laser position. The diode shows variation in average current with change in laser depth only, whereas the MOSFET shows variation both with shifts in depth and shifts in position across the striped geometry of the device. The variation is explained to be due to bipolar amplification of the charge carriers generated in the MOSFET when a pulse focus includes a channel below a gate. This conclusion is then reinforced using results from prior heavy ion and simulation work done for similar Silicon carbide MOSFETs.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129851798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328666
X. Wang, W. Lu, S. Yao, X.L. Li, Q. Guo, C. He, X. Yu, J. Sun
We present accelerated evaluation results of temperature-switching irradiation (TSI) test for ELDRS in bipolar devices at ultra-low dose rates(< 10mrad(Si)/s).
{"title":"Accelerated Test of ELDRS at Ultra-Low Dose Rates for Bipolar Devices","authors":"X. Wang, W. Lu, S. Yao, X.L. Li, Q. Guo, C. He, X. Yu, J. Sun","doi":"10.1109/RADECS45761.2018.9328666","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328666","url":null,"abstract":"We present accelerated evaluation results of temperature-switching irradiation (TSI) test for ELDRS in bipolar devices at ultra-low dose rates(< 10mrad(Si)/s).","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128440667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328678
A. Chumakov, D. Bobrovsky, A. Pechenkin, D. V. Savchenkov, G. Sorokoumov
The paper presents experimental results about transient single event latch-up (SEL) in CMOS ICs. The rail span collapse is the main reason of nonstationary SELs. A decrease of the voltage applied to n-p-n-p structure can be caused an additional current both in SEL state and in IC dynamic mode.
{"title":"Nonstationary Single Event Latch-up in CMOS ICs","authors":"A. Chumakov, D. Bobrovsky, A. Pechenkin, D. V. Savchenkov, G. Sorokoumov","doi":"10.1109/RADECS45761.2018.9328678","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328678","url":null,"abstract":"The paper presents experimental results about transient single event latch-up (SEL) in CMOS ICs. The rail span collapse is the main reason of nonstationary SELs. A decrease of the voltage applied to n-p-n-p structure can be caused an additional current both in SEL state and in IC dynamic mode.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124230830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328682
Takumi Fujimori, Minoru Watanabe
Recently, space-grade radiation-hardened SRAM-based field programmable gate arrays (FPGAs) have become available. However, since the configuration memory of SRAM-based FPGAs is sensitive to damage by radiation, flash-based FP-GAs and complex programmable logic devices (CPLDs) are frequently used for space systems instead of SRAM-based FPGAs. Although flash-based FPGAs and CPLDs are programmable devices, the configuration memory of them is somewhat robust against radiation. This paper presents experimentally obtained result of the total-ionizing-dose tolerance of the configuration function of a CPLD or MAX3000A (EPM3128ATC100-10; Intel Corp.). The total-ionizing-dose tolerances of the configuration function of six MAX3000A chips have been measured using an approximately 30 TBq 60Co gamma radiation source with emissions up to 50 krad.
{"title":"Total-Ionizing-Dose Tolerance of the configuration function of MAX3000A CPLDs","authors":"Takumi Fujimori, Minoru Watanabe","doi":"10.1109/RADECS45761.2018.9328682","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328682","url":null,"abstract":"Recently, space-grade radiation-hardened SRAM-based field programmable gate arrays (FPGAs) have become available. However, since the configuration memory of SRAM-based FPGAs is sensitive to damage by radiation, flash-based FP-GAs and complex programmable logic devices (CPLDs) are frequently used for space systems instead of SRAM-based FPGAs. Although flash-based FPGAs and CPLDs are programmable devices, the configuration memory of them is somewhat robust against radiation. This paper presents experimentally obtained result of the total-ionizing-dose tolerance of the configuration function of a CPLD or MAX3000A (EPM3128ATC100-10; Intel Corp.). The total-ionizing-dose tolerances of the configuration function of six MAX3000A chips have been measured using an approximately 30 TBq 60Co gamma radiation source with emissions up to 50 krad.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127999156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328721
N. Sukhaseum, B. Vandevelde, L. Salvy, G. Augustin, A. Varotsou, N. Chatry, M. Tali, F. Bezerra, R. Ecoffet, C. B. Polo
The SEE sensitivity of electronic devices to high energy electrons has been put in evidence experimentally. Several ground experiments have shown that electron induced SEE could occur in recent technologies. In the case of the JUICE mission, the expected electron environment is harsher than for Earth orbits. The impact of such electron fluxes on the embedded electronics was assessed in this work. The study focused on SRAM memories SEU sensitivity. Three different device references were tested under electrons, as well as under protons and heavy ions. The electron and the low energy proton direct ionization contributions to the total SEU rate have been studied in more detail.
{"title":"Risk Assessment of Electron Induced SEE during the JUICE Mission","authors":"N. Sukhaseum, B. Vandevelde, L. Salvy, G. Augustin, A. Varotsou, N. Chatry, M. Tali, F. Bezerra, R. Ecoffet, C. B. Polo","doi":"10.1109/RADECS45761.2018.9328721","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328721","url":null,"abstract":"The SEE sensitivity of electronic devices to high energy electrons has been put in evidence experimentally. Several ground experiments have shown that electron induced SEE could occur in recent technologies. In the case of the JUICE mission, the expected electron environment is harsher than for Earth orbits. The impact of such electron fluxes on the embedded electronics was assessed in this work. The study focused on SRAM memories SEU sensitivity. Three different device references were tested under electrons, as well as under protons and heavy ions. The electron and the low energy proton direct ionization contributions to the total SEU rate have been studied in more detail.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"482 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133385040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/RADECS45761.2018.9328702
Ghaith Bany Hamad, Marwan Ammar, O. Mohamed, Y. Savaria
This paper presents a continuous-time Markov chain modeling, analysis, and estimation of the LEON3 proces-sor‘s vulnerability to Single Event Upsets (SEUs). At the system-level, the proposed technique provides new insights into SEU propagation probabilities and latency.
{"title":"System-Level Characterization, Modeling, and Probabilistic Formal Analysis of LEON3 Vulnerability to Transient Faults","authors":"Ghaith Bany Hamad, Marwan Ammar, O. Mohamed, Y. Savaria","doi":"10.1109/RADECS45761.2018.9328702","DOIUrl":"https://doi.org/10.1109/RADECS45761.2018.9328702","url":null,"abstract":"This paper presents a continuous-time Markov chain modeling, analysis, and estimation of the LEON3 proces-sor‘s vulnerability to Single Event Upsets (SEUs). At the system-level, the proposed technique provides new insights into SEU propagation probabilities and latency.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115194102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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