P. Zimin, E. Mrozovskaya, V. Anashin, P. Chubunov, O. V. Meschurov, R. G. Useinov, V. M. Uzhegov, A. G. Baz, G. Zebrev
{"title":"ELDRS in p-MOS and p-MNOS Based RAD-FETs with Thick Gate Insulators: Experiment and Simulation","authors":"P. Zimin, E. Mrozovskaya, V. Anashin, P. Chubunov, O. V. Meschurov, R. G. Useinov, V. M. Uzhegov, A. G. Baz, G. Zebrev","doi":"10.1109/RADECS45761.2018.9328654","DOIUrl":null,"url":null,"abstract":"It was shown that enhanced charge trapping takes place in thick gate dielectrics of p-MOS and MNOS dosimeters at low dose rates (ELDRS). The results are shown to be consistent with the previously proposed model.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS45761.2018.9328654","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
It was shown that enhanced charge trapping takes place in thick gate dielectrics of p-MOS and MNOS dosimeters at low dose rates (ELDRS). The results are shown to be consistent with the previously proposed model.
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