{"title":"Electron injection in MOSFETs with a self-consistent Si and SiO2 BTE solution based on spherical-harmonics expansion","authors":"M. Marsella, S. Reggiani, A. Gnudi, M. Rudan","doi":"10.1109/ESSDERC.2000.194850","DOIUrl":null,"url":null,"abstract":"The solution method for the Boltzmann Transport Equation (BTE) based on the spherical-harmonics expansion (SHE) has been applied to the transport problem in a Si-SiO2 structure. A new model has been introduced to calculate the microscopic fluxes at the interface between the two materials, based on the thermionic theory. Results of a 2D MOSFET simulation are shown to validate the model.","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194850","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
The solution method for the Boltzmann Transport Equation (BTE) based on the spherical-harmonics expansion (SHE) has been applied to the transport problem in a Si-SiO2 structure. A new model has been introduced to calculate the microscopic fluxes at the interface between the two materials, based on the thermionic theory. Results of a 2D MOSFET simulation are shown to validate the model.
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