G. Olsen, M. Lange, A. Sugg, M. Ettenberg, J. Sudol, M. J. Cohen, S. Forrest
{"title":"Progress with 100 mm diameter In/sub 0.53/Ga/sub 0.47/As/InP wafer processing","authors":"G. Olsen, M. Lange, A. Sugg, M. Ettenberg, J. Sudol, M. J. Cohen, S. Forrest","doi":"10.1109/ICIPRM.1999.773709","DOIUrl":null,"url":null,"abstract":"Photodetector array results for InGaAs/InP epitaxial layers grown on 50 and 75 mm diameter InP substrates are presented. Best shunt-resistance area products for lattice-matched material exceed 100,000 ohm-cm/sup 2/. X-ray topography results indicate that low defect density (<10,000 cm/sup -2/) iron-doped InP substrates are available in 100 mm diameter. Low dark current results were also obtained with a a \"spin-on\" zinc diffusion technique whereby the source of zinc is \"spun-on\" much like a photoresist.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773709","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Photodetector array results for InGaAs/InP epitaxial layers grown on 50 and 75 mm diameter InP substrates are presented. Best shunt-resistance area products for lattice-matched material exceed 100,000 ohm-cm/sup 2/. X-ray topography results indicate that low defect density (<10,000 cm/sup -2/) iron-doped InP substrates are available in 100 mm diameter. Low dark current results were also obtained with a a "spin-on" zinc diffusion technique whereby the source of zinc is "spun-on" much like a photoresist.
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