Impact of VDMOS source metallization ageing in 3D FEM wire lift off modeling

E. Marcault, T. Azoui, P. Tounsi, M. Breil, A. Bourennane, P. Dupuy
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引用次数: 1

Abstract

Based on 3D FEM electro-thermal simulations, we explore the thermal impact of source metallization ageing inducing a bonding wire lift off on a VDMOS device. This kind of failure is usually modeled by changing the geometry of the assembly[1][2], without considering the physical properties evolution of aged materials such as the source metallization [3]. This work aims to highlight the importance of taking into account material evolution due to ageing in 3D FEM electro-thermal simulations.
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VDMOS源金属化老化对三维有限元线架建模的影响
基于三维有限元电热模拟,研究了源金属化老化对VDMOS器件键合线脱落的热影响。这种失效通常通过改变组件的几何形状来建模[1][2],而不考虑老化材料的物理性质演变,如源金属化[3]。这项工作旨在强调在三维有限元电热模拟中考虑材料老化的重要性。
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