Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765770
P. Gromala, J. Duerr, M. Dressler, K. Jansen, M. Hawryluk, J. de Vreugd
Numerical simulation plays an important role in product design. Its accuracy relays on a detailed description of geometry, material models, load and boundary conditions. This paper focuses on a new approach of FEM material modeling of three commercially available molding compounds. Curing shrinkage, modulus of elasticity and coefficient of thermal expansion were measured and implemented into commercially available FEM code Ansys. Fringe pattern technique has been used to measure warpage of bimaterial strips. Then FEM simulation of bimaterial strips were done and compared with experimental results. Curing shrinkage has been modeled in an effective way. Its accuracy has been checked on one of the materials by creating bimaterial strips with three different geometrical dimensions, that is varied thickness of mold and copper substrate.
{"title":"Comprehensive material characterization and method of its validation by means of FEM simulation","authors":"P. Gromala, J. Duerr, M. Dressler, K. Jansen, M. Hawryluk, J. de Vreugd","doi":"10.1109/ESIME.2011.5765770","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765770","url":null,"abstract":"Numerical simulation plays an important role in product design. Its accuracy relays on a detailed description of geometry, material models, load and boundary conditions. This paper focuses on a new approach of FEM material modeling of three commercially available molding compounds. Curing shrinkage, modulus of elasticity and coefficient of thermal expansion were measured and implemented into commercially available FEM code Ansys. Fringe pattern technique has been used to measure warpage of bimaterial strips. Then FEM simulation of bimaterial strips were done and compared with experimental results. Curing shrinkage has been modeled in an effective way. Its accuracy has been checked on one of the materials by creating bimaterial strips with three different geometrical dimensions, that is varied thickness of mold and copper substrate.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117049288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765779
Y. Jinghua, Hua Qing, He Yanqiang, Cao Yi-jiang, Chen Minghua, Liu Ting, L. Xiaowei
VDMOS devices with high voltage and high current are widely used in power semiconductor devices, the microelectronics and power electronics technology. In this paper, the failure properties of VDMOS devices have been investigated by temperature cycling experiment and finite element software simulation. The experiment results show that some electric properties of devices degenerate and there are some cracks on the chip surface after high and low temperature cycling. The main failure mechanism is caused by heat and thermal stress, which have a great impact on the reliability of the devices. In order to study the failure property of VDMOS device under the thermal cycles, a three-dimensional model is established and simulated by ANSYS. The simulation results show that, after applied temperature cycling field, as to thermal expansion mismatching among the components of devices, it will give rise to accumulation plastic strain and stress inner device. The dangerous section of the device is on the interface of chip and adhesive layer. The thickness of substrate and adhesive layer affect heat dissipation of device. The simulation results are in good agreement with experimental ones.
{"title":"Research on the failure property of VDMOS device by thermal cycles","authors":"Y. Jinghua, Hua Qing, He Yanqiang, Cao Yi-jiang, Chen Minghua, Liu Ting, L. Xiaowei","doi":"10.1109/ESIME.2011.5765779","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765779","url":null,"abstract":"VDMOS devices with high voltage and high current are widely used in power semiconductor devices, the microelectronics and power electronics technology. In this paper, the failure properties of VDMOS devices have been investigated by temperature cycling experiment and finite element software simulation. The experiment results show that some electric properties of devices degenerate and there are some cracks on the chip surface after high and low temperature cycling. The main failure mechanism is caused by heat and thermal stress, which have a great impact on the reliability of the devices. In order to study the failure property of VDMOS device under the thermal cycles, a three-dimensional model is established and simulated by ANSYS. The simulation results show that, after applied temperature cycling field, as to thermal expansion mismatching among the components of devices, it will give rise to accumulation plastic strain and stress inner device. The dangerous section of the device is on the interface of chip and adhesive layer. The thickness of substrate and adhesive layer affect heat dissipation of device. The simulation results are in good agreement with experimental ones.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127120014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765848
W. V. van Driel, C. Yuan, S. Koh, G.Q. Zhang
This paper presents our effort to predict the system reliability of Solid State Lighting (SSL) applications. A SSL system is composed of a LED engine with micro-electronic driver(s) that supplies power to the optic design. Knowledge of system level reliability is not only a challenging scientific exercise but it is also crucial for successful adoption of future SSL systems. Currently, the lifetime of a SSL system provided by the manufacturers is often based on just the life time of the LED emitter but a malfunction of the system in reality is often induced by the failure or degradation of a combination of subsystems/interfaces. Hence, a significant improvement in the future SSL system can be achieved when the system level reliability is well understood by proper experimental and simulation techniques.
{"title":"LED system reliability","authors":"W. V. van Driel, C. Yuan, S. Koh, G.Q. Zhang","doi":"10.1109/ESIME.2011.5765848","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765848","url":null,"abstract":"This paper presents our effort to predict the system reliability of Solid State Lighting (SSL) applications. A SSL system is composed of a LED engine with micro-electronic driver(s) that supplies power to the optic design. Knowledge of system level reliability is not only a challenging scientific exercise but it is also crucial for successful adoption of future SSL systems. Currently, the lifetime of a SSL system provided by the manufacturers is often based on just the life time of the LED emitter but a malfunction of the system in reality is often induced by the failure or degradation of a combination of subsystems/interfaces. Hence, a significant improvement in the future SSL system can be achieved when the system level reliability is well understood by proper experimental and simulation techniques.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125888967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765823
T. Azoui, P. Tounsi, G. Pasquet, P. Dupuy, J. Dorkel
In this paper we present a simple methodology for generating dynamic compact thermal model (CTM) of electronics components. Several innovations generating accurate dynamic Compact Thermal Models (CTMs) are proposed in this paper. This makes possible providing customers (automotive systems suppliers) with extended datasheets, including CTMs, without publishing any confidential information about technology, device structures nor materials. The proposed model takes into account the 3D effects of the heat transfer, it considers the effect of the nonlinearity of parameters like thermal conductivity and the dependence of dissipated power on temperature. Moreover, the total number of boundary conditions allowing the generation of boundary condition independent (BCI) compact thermal models is considerably reduced. The method presented in this paper is applied to the extraction of dynamic CTM for automotive power device.
{"title":"Dynamic Compact Thermal Model for electrothermal modeling and design optimization of automotive power devices","authors":"T. Azoui, P. Tounsi, G. Pasquet, P. Dupuy, J. Dorkel","doi":"10.1109/ESIME.2011.5765823","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765823","url":null,"abstract":"In this paper we present a simple methodology for generating dynamic compact thermal model (CTM) of electronics components. Several innovations generating accurate dynamic Compact Thermal Models (CTMs) are proposed in this paper. This makes possible providing customers (automotive systems suppliers) with extended datasheets, including CTMs, without publishing any confidential information about technology, device structures nor materials. The proposed model takes into account the 3D effects of the heat transfer, it considers the effect of the nonlinearity of parameters like thermal conductivity and the dependence of dissipated power on temperature. Moreover, the total number of boundary conditions allowing the generation of boundary condition independent (BCI) compact thermal models is considerably reduced. The method presented in this paper is applied to the extraction of dynamic CTM for automotive power device.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126658016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765785
C. K. Wong, S. Y. Y. Leung, R. Poelma, K. Jansen, C. Yuan, W. V. van Driel, G. Zhang
The traction-displacement relations of the epoxy-copper interfaces are studied using an atomistic model. The reaction force of the epoxy layer in response to displacement of the interface is calculated during molecular dynamics simulation. A parametric study in terms of displacement rate and the step size of displacement increment has been performed. The traction-displacement relations are found sensitive to the step size of the displacement increment. The traction-displacement relations are better described with a small displacement increment in the initial region where the epoxy-copper interface is in close contact. The interfacial energy as calculated by the traction-displacement model is −0.28 Jm−2 which is comparable to the value obtained from a static model. This calculated value is also close to the thermodynamic work of adhesion (−0.26 Jm−2) of an epoxy-copper system as reported in the literature [1].
用原子模型研究了环氧树脂-铜界面的牵引-位移关系。在分子动力学模拟中，计算了界面位移对环氧层反作用力的响应。从位移速率和位移增量步长两个方面进行了参数化研究。牵引力-位移关系对位移增量的步长很敏感。在环氧-铜界面紧密接触的初始区域，位移增量较小，可以更好地描述牵引力-位移关系。牵引力-位移模型计算得到的界面能为- 0.28 Jm - 2，与静态模型计算得到的界面能相当。该计算值也接近文献[1]中报道的环氧-铜体系的粘接热力学功(- 0.26 Jm - 2)。
{"title":"Molecular Dynamics study of the traction-displacement relations of epoxy-copper interfaces","authors":"C. K. Wong, S. Y. Y. Leung, R. Poelma, K. Jansen, C. Yuan, W. V. van Driel, G. Zhang","doi":"10.1109/ESIME.2011.5765785","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765785","url":null,"abstract":"The traction-displacement relations of the epoxy-copper interfaces are studied using an atomistic model. The reaction force of the epoxy layer in response to displacement of the interface is calculated during molecular dynamics simulation. A parametric study in terms of displacement rate and the step size of displacement increment has been performed. The traction-displacement relations are found sensitive to the step size of the displacement increment. The traction-displacement relations are better described with a small displacement increment in the initial region where the epoxy-copper interface is in close contact. The interfacial energy as calculated by the traction-displacement model is −0.28 Jm−2 which is comparable to the value obtained from a static model. This calculated value is also close to the thermodynamic work of adhesion (−0.26 Jm−2) of an epoxy-copper system as reported in the literature [1].","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129821864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765769
M. Erinc, H. van de Wiel, R. Werkhoven, A. Pongrácz, G. Battistig, H. Fischer
MEMS devices and sensors in automotive applications are exposed to vibrations during service life. These vibrations can have a profound effect on the accuracy and reliability of the device. In this study a 3D force sensor, to be used in an automotive tire for the measurement of longitudinal and lateral forces is analysed. The study compromises two parts: First, a numerical analysis is performed to determine Eigen frequencies of the device and a stress strain analysis to determine allowable displacements before the sensor is damaged. Next, Eigen frequencies and mechanical fatigue resistance is evaluated by means of vibration exciter experiments. Additionally, a road test is performed on a test circuit to determine the robustness of the force sensor under actual automotive load conditions while attached to the rims of the wheels.
{"title":"Vibration characterization of a MEMS 3D force sensor","authors":"M. Erinc, H. van de Wiel, R. Werkhoven, A. Pongrácz, G. Battistig, H. Fischer","doi":"10.1109/ESIME.2011.5765769","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765769","url":null,"abstract":"MEMS devices and sensors in automotive applications are exposed to vibrations during service life. These vibrations can have a profound effect on the accuracy and reliability of the device. In this study a 3D force sensor, to be used in an automotive tire for the measurement of longitudinal and lateral forces is analysed. The study compromises two parts: First, a numerical analysis is performed to determine Eigen frequencies of the device and a stress strain analysis to determine allowable displacements before the sensor is damaged. Next, Eigen frequencies and mechanical fatigue resistance is evaluated by means of vibration exciter experiments. Additionally, a road test is performed on a test circuit to determine the robustness of the force sensor under actual automotive load conditions while attached to the rims of the wheels.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123886034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765782
W. Schock, J. Mehner, J. Fritz, Jorg Muchow, C. Friese, S. Pinter
A 2D scanning micro mirror is modelled based on numerical simulations and optimized using the Matlab optimization Toolbox. The simulation model covers structural, fluidic and electrostatic effects. The goals of the optimization are low driving voltages and robustness against process variations. The simulated behaviour of the optimized design is compared to experimental results.
{"title":"FEM based modeling and optimization of a 2D micro mirror","authors":"W. Schock, J. Mehner, J. Fritz, Jorg Muchow, C. Friese, S. Pinter","doi":"10.1109/ESIME.2011.5765782","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765782","url":null,"abstract":"A 2D scanning micro mirror is modelled based on numerical simulations and optimized using the Matlab optimization Toolbox. The simulation model covers structural, fluidic and electrostatic effects. The goals of the optimization are low driving voltages and robustness against process variations. The simulated behaviour of the optimized design is compared to experimental results.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121455840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765775
S. Hutterer, F. Auinger, M. Affenzeller
Electric power grid operation being an ever challenging scientific field is faced with a high variety of optimization problems. Since the future vision of so called smart grids causes higher complexity and new requirements to these problems, sophisticated investigation in suitable optimization algorithms is essential. Here, metaheuristic optimization strategies are proven to be suitable for high dimensional multimodal problems, and are capable of computing good solutions for hard problems in reasonable time. Therefore, a simulation- based optimization approach is introduced forming a highly applicable framework for testing the suitability of metaheuristic algorithms to practical optimization problems in power grid operation. Different algorithms will be experimentally compared to each other based on Optimal Power Flow computation to the standardized IEEE 30-Bus testcase.
{"title":"Comparison of metaheuristic algorithms for simulation based OPF computation","authors":"S. Hutterer, F. Auinger, M. Affenzeller","doi":"10.1109/ESIME.2011.5765775","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765775","url":null,"abstract":"Electric power grid operation being an ever challenging scientific field is faced with a high variety of optimization problems. Since the future vision of so called smart grids causes higher complexity and new requirements to these problems, sophisticated investigation in suitable optimization algorithms is essential. Here, metaheuristic optimization strategies are proven to be suitable for high dimensional multimodal problems, and are capable of computing good solutions for hard problems in reasonable time. Therefore, a simulation- based optimization approach is introduced forming a highly applicable framework for testing the suitability of metaheuristic algorithms to practical optimization problems in power grid operation. Different algorithms will be experimentally compared to each other based on Optimal Power Flow computation to the standardized IEEE 30-Bus testcase.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"52 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113937588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765859
C. Bailey, C. Yin, H. Lu, C. Cartwright
This paper presents the current progress in the development of a design environment for solid state lighting that aims to provide engineers with the tools to assess thermal, mechanical, and optical performance of a solid state lighting system. When coupled with human vision models, this design environment will help ensure the reliability and viewability requirements of solid lighting devices. For demonstration purpose, optical simulations of a Light Emitting Diode (LED) backlight unit for display was carried out using ray tracing calculations and the output from the simulations was coupled to the human vision model, i.e. the Just Noticeable Difference (JND) method, so that the impact of the backlight on the readability of the display can be analyzed. The junction temperature of the LED in this backlight design was predicted using Finite Element Analysis (FEA) and the model was also used to predict the key parameters in designing the LED backlight unit.
{"title":"Multi-physics and multi-disciplinary analysis for solid state lighting","authors":"C. Bailey, C. Yin, H. Lu, C. Cartwright","doi":"10.1109/ESIME.2011.5765859","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765859","url":null,"abstract":"This paper presents the current progress in the development of a design environment for solid state lighting that aims to provide engineers with the tools to assess thermal, mechanical, and optical performance of a solid state lighting system. When coupled with human vision models, this design environment will help ensure the reliability and viewability requirements of solid lighting devices. For demonstration purpose, optical simulations of a Light Emitting Diode (LED) backlight unit for display was carried out using ray tracing calculations and the output from the simulations was coupled to the human vision model, i.e. the Just Noticeable Difference (JND) method, so that the impact of the backlight on the readability of the display can be analyzed. The junction temperature of the LED in this backlight design was predicted using Finite Element Analysis (FEA) and the model was also used to predict the key parameters in designing the LED backlight unit.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"43 22","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132974648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-04-18DOI: 10.1109/ESIME.2011.5765764
M. Hsieh, Sheng-Tsai Wu, Chung-Jung Wu, J. Lau, R. Tain, W. Lo
The technology of 3D IC integration is highly probable to achieve the demand for high performance, better reliability, miniaturization and lower-priced portable electronic products. Since the through silicon via (TSV) is the heart in 3D IC integration architectures, the reliability issues of TSV interconnects should be extremely concerned. Due to the large thermal expansion mismatch among the Cu, Si, and SiO2, the induced thermal stresses and strains can occur and become the driving forces for failures in TSV interconnects. Hence, the stress analyses and failure mode investigation for TSVs are in urgent need. Among the typical failures, the mostly common failure type is delamination, which will be caused when lower energy release rate (ERR) or higher critical stresses at interfaces are presented. In this study, the finite element modeling (FEM) for a symmetrical single in-line copper filled TSV with redistribution layer is illustrated. Two kinds of horizontal cracks that embedded in the interface of SiO2 passivation and Cu seed layer (Cu pad delamination cases) are introduced to realize the interfacial ERR, where is also the critical stress area that observed from finite element analysis. The significance of design parameters such as crack length, TSV diameter, TSV pitch, depth of TSV, SiO2 thickness and Cu seed layer thickness are also brought up. The methodology of design of experiments (DoE) has been adopted to capture the most important mechanical parameters of the TSV to comprehend the corresponding ERR. It is believed that these results would be helpful to avoid delamination of TSV interconnects in 3D IC integration.
{"title":"Energy release rate investigation for through silicon vias (TSVs) in 3D IC integration","authors":"M. Hsieh, Sheng-Tsai Wu, Chung-Jung Wu, J. Lau, R. Tain, W. Lo","doi":"10.1109/ESIME.2011.5765764","DOIUrl":"https://doi.org/10.1109/ESIME.2011.5765764","url":null,"abstract":"The technology of 3D IC integration is highly probable to achieve the demand for high performance, better reliability, miniaturization and lower-priced portable electronic products. Since the through silicon via (TSV) is the heart in 3D IC integration architectures, the reliability issues of TSV interconnects should be extremely concerned. Due to the large thermal expansion mismatch among the Cu, Si, and SiO2, the induced thermal stresses and strains can occur and become the driving forces for failures in TSV interconnects. Hence, the stress analyses and failure mode investigation for TSVs are in urgent need. Among the typical failures, the mostly common failure type is delamination, which will be caused when lower energy release rate (ERR) or higher critical stresses at interfaces are presented. In this study, the finite element modeling (FEM) for a symmetrical single in-line copper filled TSV with redistribution layer is illustrated. Two kinds of horizontal cracks that embedded in the interface of SiO2 passivation and Cu seed layer (Cu pad delamination cases) are introduced to realize the interfacial ERR, where is also the critical stress area that observed from finite element analysis. The significance of design parameters such as crack length, TSV diameter, TSV pitch, depth of TSV, SiO2 thickness and Cu seed layer thickness are also brought up. The methodology of design of experiments (DoE) has been adopted to capture the most important mechanical parameters of the TSV to comprehend the corresponding ERR. It is believed that these results would be helpful to avoid delamination of TSV interconnects in 3D IC integration.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127579626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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