{"title":"A bandgap circuit operating up to 300/spl deg/C using lateral bipolar transistors in thin-film CMOS-SOI technology","authors":"S. Adriaensen, V. Dessard, D. Flandre","doi":"10.1109/SOI.1999.819838","DOIUrl":null,"url":null,"abstract":"A voltage reference circuit with 3 V output has been designed and implemented in an SOI FD (fully-depleted) CMOS technology for very wide temperature range applications. The design uses lateral bipolar transistors and thin-film diffusion resistors. The circuit has been fabricated and tested over the full operating temperature range (25/spl deg/C-300/spl deg/C) and provides a temperature coefficient better than 100 ppm//spl deg/C.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819838","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21
Abstract
A voltage reference circuit with 3 V output has been designed and implemented in an SOI FD (fully-depleted) CMOS technology for very wide temperature range applications. The design uses lateral bipolar transistors and thin-film diffusion resistors. The circuit has been fabricated and tested over the full operating temperature range (25/spl deg/C-300/spl deg/C) and provides a temperature coefficient better than 100 ppm//spl deg/C.
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