{"title":"A 5-b 1-GS/s 2.7-mW binary-search ADC in 90nm digital CMOS","authors":"Yung-Hui Chung, Cheng-Hsun Tsai, Hsuan-Chin Yeh","doi":"10.1109/SOCC.2015.7406902","DOIUrl":null,"url":null,"abstract":"A power-efficiency and speed-enhancing technique for binary-search ADCs is presented. Asynchronous timing and reduced-count binary-search architecture is implemented to achieve a high-speed operation. The distributed track-and-hold circuit is applied to relax the ENOB degradation caused by the comparator kickback noise and dynamic offset. A prototype 5-b 1-GS/s ADC was simulated in a 90nm CMOS technology. It consumes 2.7 mW from a 1.2 V supply. The ADC core occupies an active area of 0.012 mm2. With the post-layout simulation results, the SNDR and SFDR are 30 dB and 40 dB respectively. The equivalent ENOB is 4.55 b at the Nyquist-rate input. Its FoM is 115 fJ/conversion-step.","PeriodicalId":329464,"journal":{"name":"2015 28th IEEE International System-on-Chip Conference (SOCC)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 28th IEEE International System-on-Chip Conference (SOCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOCC.2015.7406902","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A power-efficiency and speed-enhancing technique for binary-search ADCs is presented. Asynchronous timing and reduced-count binary-search architecture is implemented to achieve a high-speed operation. The distributed track-and-hold circuit is applied to relax the ENOB degradation caused by the comparator kickback noise and dynamic offset. A prototype 5-b 1-GS/s ADC was simulated in a 90nm CMOS technology. It consumes 2.7 mW from a 1.2 V supply. The ADC core occupies an active area of 0.012 mm2. With the post-layout simulation results, the SNDR and SFDR are 30 dB and 40 dB respectively. The equivalent ENOB is 4.55 b at the Nyquist-rate input. Its FoM is 115 fJ/conversion-step.