CURRENT VS. LOGIC TESTING OF GATE OXIDE SHORT, FLOATING GATE AND BRIDGING FAILURES IN CMOS

R. Rodríguez-Montañés, J. Segura, V. Champac, J. Figueras, J. A. Rubio
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引用次数: 101

Abstract

Logic testing has s o m e well known l imi ta t ions f o r circuits with failures causing intermediate voltage levels or, even , correct logic outputs with parametric deuiat ions f r o m the fault free specificattons. For these failures current testing might be considered as a complementary technique t o logic testing. I n this work, these physical defects widely encountered i n ioday’s CMOS processes, are modelled taking into account t h e topology o f the defective circuit and the parameters o f the technology used. These models are used to simulate a t electrical level (SPICE) the behaviour of a simple three inver ter chain wi th a f au l t y inverter. T h e merits o f current testing in f ront of voltage testing are studied for the classes of defects modelled.
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cmos中栅极氧化物短路、浮栅和桥接故障的电流与逻辑测试
逻辑测试一直以来都有一个众所周知的局限性,那就是电路的故障会导致中间电压水平,甚至是正确的逻辑输出,但参数偏离了无故障规格。对于这些故障,电流测试可以被认为是逻辑测试的补充技术。在这项工作中,考虑到缺陷电路的拓扑结构和所用技术的参数,对这些在当今CMOS工艺中广泛遇到的物理缺陷进行了建模。这些模型被用来模拟一个简单的三逆变器链的电电平(SPICE)的行为与一个坏的逆变器。针对所建立的缺陷类型,研究了电流测试优先于电压测试的优点。
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