K. Kinoshita, T. Okutani, H. Tanaka, T. Hinoki, H. Agura, K. Yazawa, K. Ohmi, S. Kishida
{"title":"Flexible and transparent ReRAM with GZO-memory-layer and GZO-electrodes on large PEN sheet","authors":"K. Kinoshita, T. Okutani, H. Tanaka, T. Hinoki, H. Agura, K. Yazawa, K. Ohmi, S. Kishida","doi":"10.1109/IMW.2010.5488315","DOIUrl":null,"url":null,"abstract":"Fabrication of flexible transparent ReRAM consisting of the GZO memory layer and GZO-electrodes on the PEN sheet with large area was attained by the introduction of the RF plasma assist DC magnetron sputtering method. Resistive switching mechanism of all-GZO-FT-ReRAM can be explained by the redox model as well as that of conventional binary transition metal oxides. Reset switching of all-GZO-FT-ReRAM which memory layer is GZO(RH2=5%) is smooth and continuous, which enables the verify operation and the multilevel application.","PeriodicalId":149628,"journal":{"name":"2010 IEEE International Memory Workshop","volume":"126 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2010.5488315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
Fabrication of flexible transparent ReRAM consisting of the GZO memory layer and GZO-electrodes on the PEN sheet with large area was attained by the introduction of the RF plasma assist DC magnetron sputtering method. Resistive switching mechanism of all-GZO-FT-ReRAM can be explained by the redox model as well as that of conventional binary transition metal oxides. Reset switching of all-GZO-FT-ReRAM which memory layer is GZO(RH2=5%) is smooth and continuous, which enables the verify operation and the multilevel application.
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