D. Wellekens, S. Van Elshocht, C. Adelmann, J. Meersschaut, J. Swerts, J. Kittl, A. Cacciato, I. Debusschere, M. Jurczak, J. van Houdt
{"title":"Exploration of rare earth materials for future interpoly dielectric replacement in Flash memory devices","authors":"D. Wellekens, S. Van Elshocht, C. Adelmann, J. Meersschaut, J. Swerts, J. Kittl, A. Cacciato, I. Debusschere, M. Jurczak, J. van Houdt","doi":"10.1109/IMW.2010.5488331","DOIUrl":null,"url":null,"abstract":"Rare-earth lanthanates and scandates have been studied for possible use as future Flash interpoly dielectrics. It was shown that a post-deposition anneal in O2 at high temperature (∼1000°C or above) gives rise to silicate formation. This results in excellent memory retention and larger robustness of the layers as compared to anneal in N2.","PeriodicalId":149628,"journal":{"name":"2010 IEEE International Memory Workshop","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2010.5488331","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Rare-earth lanthanates and scandates have been studied for possible use as future Flash interpoly dielectrics. It was shown that a post-deposition anneal in O2 at high temperature (∼1000°C or above) gives rise to silicate formation. This results in excellent memory retention and larger robustness of the layers as compared to anneal in N2.
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