{"title":"Electrical Characterization of Al/PVA/Ni and Al/PVA/P3HT/Ni Capacitors for Organic Electronics Applications","authors":"Taiza A. Neves, Taiane C. Neves, H. Boudinov","doi":"10.1109/SBMicro.2019.8919372","DOIUrl":null,"url":null,"abstract":"Al/PVA/Ni and Al/PVA/P3HT/Ni capacitors were fabricated in this work. PVA capacitors were prepared by spin coating of water solution on top of Ni layer deposited by sputtering on glass plates. For the PVA/P3HT capacitors region-regular P3HT was dissolved in chlorobenzene and deposited by spin coating on similar Ni/glass substrates. After annealing the PVA solution was deposited. Aluminum circular contacts were evaporated through a mechanical mask. I-V and C-V measurements at different temperatures were performed. Difference in the electric field distribution from accumulation to depletion state in Al/PVA/P3HT/Ni structure was used to explain the data. The methodology used for this study proved to be successful in the sense of comparing the dielectric properties of PVA and P3HT considering the differences between Al/PVA/Ni and Al/PVA/P3HT/Ni capacitors.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SBMicro.2019.8919372","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Al/PVA/Ni and Al/PVA/P3HT/Ni capacitors were fabricated in this work. PVA capacitors were prepared by spin coating of water solution on top of Ni layer deposited by sputtering on glass plates. For the PVA/P3HT capacitors region-regular P3HT was dissolved in chlorobenzene and deposited by spin coating on similar Ni/glass substrates. After annealing the PVA solution was deposited. Aluminum circular contacts were evaporated through a mechanical mask. I-V and C-V measurements at different temperatures were performed. Difference in the electric field distribution from accumulation to depletion state in Al/PVA/P3HT/Ni structure was used to explain the data. The methodology used for this study proved to be successful in the sense of comparing the dielectric properties of PVA and P3HT considering the differences between Al/PVA/Ni and Al/PVA/P3HT/Ni capacitors.