Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919472
E. Simoen, C. Claeys, A. Oliveira, P. Agopian, J. Martino, B. Hsu, G. Eneman, E. Rosseel, R. Loo, H. Arimura, N. Horiguchi, Wei-Chen Wen, H. Nakashima
A review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some basic types of devices, like a p-n junction diode, a Metal-Oxide-Semiconductor (MOS) capacitor and a Fin-Field-Effect Transistor (FinFET) fabricated in Ge-on-Si. A good understanding of the impact on the leakage current and lifetime in p-n diodes will be shown. Deep-Level Transient Spectroscopy on Ge MOScaps enables the investigation of bulk and interface states related to threading dislocations Finally, the application of Generation-Recombination (GR) noise spectroscopy to the study of GR centers in strained and relaxed Ge-on-Si FinFETs will be illustrated.
本文报道了锗异质外延层中扩展缺陷的电活动，更具体地说，是螺纹位错。重点是一些基本类型的器件的影响，如p-n结二极管，金属氧化物半导体(MOS)电容器和用锗硅制造的翅片场效应晶体管(FinFET)。将显示对p-n二极管泄漏电流和寿命的影响的良好理解。Ge MOScaps上的深能级瞬态光谱可以研究与螺纹位错相关的体态和界面态。最后，将说明产生复合(GR)噪声光谱在应变和松弛Ge-on- si finfet中GR中心研究中的应用。
{"title":"Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy","authors":"E. Simoen, C. Claeys, A. Oliveira, P. Agopian, J. Martino, B. Hsu, G. Eneman, E. Rosseel, R. Loo, H. Arimura, N. Horiguchi, Wei-Chen Wen, H. Nakashima","doi":"10.1109/SBMicro.2019.8919472","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919472","url":null,"abstract":"A review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some basic types of devices, like a p-n junction diode, a Metal-Oxide-Semiconductor (MOS) capacitor and a Fin-Field-Effect Transistor (FinFET) fabricated in Ge-on-Si. A good understanding of the impact on the leakage current and lifetime in p-n diodes will be shown. Deep-Level Transient Spectroscopy on Ge MOScaps enables the investigation of bulk and interface states related to threading dislocations Finally, the application of Generation-Recombination (GR) noise spectroscopy to the study of GR centers in strained and relaxed Ge-on-Si FinFETs will be illustrated.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115121189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919338
J. A. Padovese, L. Yojo, R. Rangel, K. Sasaki, J. Martino
The BESOI (Back Enhanced SOI) MOSFET is a new device that was developed and fabricated at the University of Sao Paulo in 2015. Its main advantages are the reconfigurable behavior, i.e., can work both like P- and N-type transistor depending only of the back gate bias, and fabrication simplicity. This paper studies the influence of channel doping concentration on the sensitivity of BESOI MOSFET used as a light sensor. The light sensitivity is investigated for different doping elements (boron and phosphorus) and it is shown that one impurity is more suited for a certain operation mode, i.e., pMOS and nMOS. An optimal doping concentration for better light sensitivity is obtained, resulting in $10^{mathbf{17}} mathbf{cm} ^{mathbf{-3}}$ of boron for p-type $(V_{mathbf{GB}} lt lt 0)$ and the same level of phosphorus for n-type $(V_{mathbf{GB}} gt gt 0)$ BESOI MOSFET.
{"title":"Channel Doping Concentration Influence on BESOI MOSFET Light Sensor","authors":"J. A. Padovese, L. Yojo, R. Rangel, K. Sasaki, J. Martino","doi":"10.1109/SBMicro.2019.8919338","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919338","url":null,"abstract":"The BESOI (Back Enhanced SOI) MOSFET is a new device that was developed and fabricated at the University of Sao Paulo in 2015. Its main advantages are the reconfigurable behavior, i.e., can work both like P- and N-type transistor depending only of the back gate bias, and fabrication simplicity. This paper studies the influence of channel doping concentration on the sensitivity of BESOI MOSFET used as a light sensor. The light sensitivity is investigated for different doping elements (boron and phosphorus) and it is shown that one impurity is more suited for a certain operation mode, i.e., pMOS and nMOS. An optimal doping concentration for better light sensitivity is obtained, resulting in $10^{mathbf{17}} mathbf{cm} ^{mathbf{-3}}$ of boron for p-type $(V_{mathbf{GB}} lt lt 0)$ and the same level of phosphorus for n-type $(V_{mathbf{GB}} gt gt 0)$ BESOI MOSFET.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127443774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919289
Rosimara P. Toledo, D. R. Huanca, A. Oliveira, R. Rubinger, Matheus J. Silva, S. G. S. Filho
Macroporous silicon films were yielded by electrochemical corrosion in HF:DMF solution, after the structure passivation with polyaniline and then this film was doped with erbium using the cyclic voltammetry method. The structural analysis by scanning electron microscopy shown us the pores formation, whereas the analysis by Fourier transform infrared spectroscopy reveals the formation of silicon oxide during the PANI deposition and the structural modification of PANI by the formation of addition functional groups by the erbium atoms. The results of the electrical measurements indicated that PANI reduces the space charge region width, as well as the amount of surface state density, but the current flow through the MPS/PANI devices is low due to the presence of SiO2 inside the structure. This effect is partially recovered by the inclusion of erbium because of its effect of further reducing the space charge region width.
{"title":"Electrical properties of MPS/PANI heterojunction doped with erbium","authors":"Rosimara P. Toledo, D. R. Huanca, A. Oliveira, R. Rubinger, Matheus J. Silva, S. G. S. Filho","doi":"10.1109/SBMicro.2019.8919289","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919289","url":null,"abstract":"Macroporous silicon films were yielded by electrochemical corrosion in HF:DMF solution, after the structure passivation with polyaniline and then this film was doped with erbium using the cyclic voltammetry method. The structural analysis by scanning electron microscopy shown us the pores formation, whereas the analysis by Fourier transform infrared spectroscopy reveals the formation of silicon oxide during the PANI deposition and the structural modification of PANI by the formation of addition functional groups by the erbium atoms. The results of the electrical measurements indicated that PANI reduces the space charge region width, as well as the amount of surface state density, but the current flow through the MPS/PANI devices is low due to the presence of SiO2 inside the structure. This effect is partially recovered by the inclusion of erbium because of its effect of further reducing the space charge region width.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128804684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919480
S. Boyeras, S. Pazos, F. Aguirre, H. Giannetta, Catherine Delgado, F. Palumbo
Using different proportions of A12O3 and HfO2 dielectrics on a 10 nm thick gate insulator, this work studies the influence of each layer on the breakdown transients of metal-oxide-semiconductor (MOS) capacitors. The MOS structures are subjected to a constant voltage stress to determine the breakdown current and the degradation rate. Using an electromigration-based model to explain the current growth through the stack during progressive breakdown, a clear increase in the applied voltage that results in a certain degradation rate is observed as the A12O3 thickness is increased. This can be linked to a strong contribution of the higher thermal conductivity of A12O3 to the overall degradation dynamics of the stack. Results suggest that a small increase of the effective oxide thickness can be traded-off for longer lifetimes in future MOS stacks.
{"title":"Progressive Breakdown on Bi-Layered Gate Oxide Stacks","authors":"S. Boyeras, S. Pazos, F. Aguirre, H. Giannetta, Catherine Delgado, F. Palumbo","doi":"10.1109/SBMicro.2019.8919480","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919480","url":null,"abstract":"Using different proportions of A12O3 and HfO2 dielectrics on a 10 nm thick gate insulator, this work studies the influence of each layer on the breakdown transients of metal-oxide-semiconductor (MOS) capacitors. The MOS structures are subjected to a constant voltage stress to determine the breakdown current and the degradation rate. Using an electromigration-based model to explain the current growth through the stack during progressive breakdown, a clear increase in the applied voltage that results in a certain degradation rate is observed as the A12O3 thickness is increased. This can be linked to a strong contribution of the higher thermal conductivity of A12O3 to the overall degradation dynamics of the stack. Results suggest that a small increase of the effective oxide thickness can be traded-off for longer lifetimes in future MOS stacks.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123938355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919439
C. Finardi, S. Tenenbaum, R. Panepucci
This paper presents the characterization of an electro-optical modulator integrated to an optical transmitter based on silicon photonics technology for high rates. The modulator is implemented through a micro-ring structure, due to its compactness and low modulating voltage. The device was characterized in electro-optical (EO) band and its performance analyzed in data transmission up to 10 Gb/s at $lambda =1544 nm$.
{"title":"Characterization of Silicon Photonics Ring Modulator for 10 Gb/s","authors":"C. Finardi, S. Tenenbaum, R. Panepucci","doi":"10.1109/SBMicro.2019.8919439","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919439","url":null,"abstract":"This paper presents the characterization of an electro-optical modulator integrated to an optical transmitter based on silicon photonics technology for high rates. The modulator is implemented through a micro-ring structure, due to its compactness and low modulating voltage. The device was characterized in electro-optical (EO) band and its performance analyzed in data transmission up to 10 Gb/s at $lambda =1544 nm$.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126257315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919374
F. C. Feitosa, W. Pereira, R. Bühler, R. Giacomini
The vehicular fleet around the world is going through an enormous transition in its energetic matrix, mostly because governments around the globe are concerned about pollution. This paper focus on the research of Wide Band Gap (WBG) Silicon Carbide (SiC) Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor (VDMOSFET), concerning to its use in electric vehicles, through experimental and TCAD simulation analysis. Three main parameters were addressed: interface charge, channel doping concentration and gate to channel overlap/underlap. For each of the parameters, the IxV curves were traced for several values. Threshold voltage (Vth), maximum transconductance (max. gm) and subthreshold slope (S) were analyzed. This paper describes in detail the device characteristics and mathematical models that are needed for TCAD.
{"title":"Analysis of SiC MOSFETs Basic Parameters Aiming Application in Power Drivers for Electric Vehicles","authors":"F. C. Feitosa, W. Pereira, R. Bühler, R. Giacomini","doi":"10.1109/SBMicro.2019.8919374","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919374","url":null,"abstract":"The vehicular fleet around the world is going through an enormous transition in its energetic matrix, mostly because governments around the globe are concerned about pollution. This paper focus on the research of Wide Band Gap (WBG) Silicon Carbide (SiC) Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor (VDMOSFET), concerning to its use in electric vehicles, through experimental and TCAD simulation analysis. Three main parameters were addressed: interface charge, channel doping concentration and gate to channel overlap/underlap. For each of the parameters, the IxV curves were traced for several values. Threshold voltage (Vth), maximum transconductance (max. gm) and subthreshold slope (S) were analyzed. This paper describes in detail the device characteristics and mathematical models that are needed for TCAD.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134274439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919357
Gustavo Marcati A. Alves, R. Mansano
The measurement of vibration shape modes in micromechanical devices is a task restricted to expensive and complex equipment like scanning laser doppler vibrometers or white light interferometers. At this work we show that using an optical pick-up extracted from a commercial CD-ROM drive, is possible with off-the-shelf equipment, measure the vibration modes of microcantilevers in one dimension, taking advantage of the built-in movable lens present in CD-ROM laser pick-up assembly. The focus lens scans the device in one dimension, measuring the vibration at various point of the structure with velocities in the range of$150~mu text{m}$/s while the device is excited with a piezo driven by composed frequency signal. The first 3 shape modes flexural vibration of a cantilever with micrometer dimensions were measured and compared to the theoretical shape. We also measured the noise density of the pick-up, comparing with the theoretical Brownian motion resulting in 3 pm/Hz1/2 noise floor.
{"title":"Profiling of Microcantilever Vibration Modes by Scanning Astigmatic System","authors":"Gustavo Marcati A. Alves, R. Mansano","doi":"10.1109/SBMicro.2019.8919357","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919357","url":null,"abstract":"The measurement of vibration shape modes in micromechanical devices is a task restricted to expensive and complex equipment like scanning laser doppler vibrometers or white light interferometers. At this work we show that using an optical pick-up extracted from a commercial CD-ROM drive, is possible with off-the-shelf equipment, measure the vibration modes of microcantilevers in one dimension, taking advantage of the built-in movable lens present in CD-ROM laser pick-up assembly. The focus lens scans the device in one dimension, measuring the vibration at various point of the structure with velocities in the range of$150~mu text{m}$/s while the device is excited with a piezo driven by composed frequency signal. The first 3 shape modes flexural vibration of a cantilever with micrometer dimensions were measured and compared to the theoretical shape. We also measured the noise density of the pick-up, comparing with the theoretical Brownian motion resulting in 3 pm/Hz1/2 noise floor.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130757321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919398
C. Macambira, P. Agopian, J. Martino
In this paper, the sensitivity of the modulated fringing field n-type tunneling field effect transistor biosensor (Bio-TFET) was investigated over the influence of drain doping concentration and biomaterial thickness (tBio). It is shown that the sensitivity of the Bio-TFET improves as the drain doping concentration increases up to $1 times 10^{20}$ cm−3. The tBio influence over the sensitivity increases for thicker biomaterials up to 40 nm and present lower increment for higher tBio. The highest sensitivity value obtained in this work was for a drain doping concentration of $1 times 10^{20}$ cm−3 and for biomaterial thickness equal or higher than 40 nm.
{"title":"Impact of Drain Doping and Biomaterial Thickness in a Dielectrically Modulated Fringing Field Bio-TFET Device","authors":"C. Macambira, P. Agopian, J. Martino","doi":"10.1109/SBMicro.2019.8919398","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919398","url":null,"abstract":"In this paper, the sensitivity of the modulated fringing field n-type tunneling field effect transistor biosensor (Bio-TFET) was investigated over the influence of drain doping concentration and biomaterial thickness (tBio). It is shown that the sensitivity of the Bio-TFET improves as the drain doping concentration increases up to $1 times 10^{20}$ cm−3. The tBio influence over the sensitivity increases for thicker biomaterials up to 40 nm and present lower increment for higher tBio. The highest sensitivity value obtained in this work was for a drain doping concentration of $1 times 10^{20}$ cm−3 and for biomaterial thickness equal or higher than 40 nm.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115485918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919308
Santos Stefany C. S. dos, Dias Leonay E. S., João H. Pinton, Rosimara P. Toledo, D. R. Huanca
Polyaniline (PANI) samples were synthesized onto platinum wire in HCl-based aqueous solution containing low amounts of nickel sulfate. The structural analysis of them shows increasing densification of its porous structure insofar the amount of this salt increases. This fact leads to the enhancement of its total conductance, consequently, improves the current flow. In addition, the impedance electrochemical spectroscopy shows that also the capacitances and resistances associated to the platinum/PANI/electrolyte system also undergoes modification so that the current-potential curves exhibit an increasing hysteresis, making this material an excellent candidate to be used in energy storage devices or supercapacitors.
{"title":"Synthesis and Electrical properties of polyaniline yielded in nickel sulfate salt","authors":"Santos Stefany C. S. dos, Dias Leonay E. S., João H. Pinton, Rosimara P. Toledo, D. R. Huanca","doi":"10.1109/SBMicro.2019.8919308","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919308","url":null,"abstract":"Polyaniline (PANI) samples were synthesized onto platinum wire in HCl-based aqueous solution containing low amounts of nickel sulfate. The structural analysis of them shows increasing densification of its porous structure insofar the amount of this salt increases. This fact leads to the enhancement of its total conductance, consequently, improves the current flow. In addition, the impedance electrochemical spectroscopy shows that also the capacitances and resistances associated to the platinum/PANI/electrolyte system also undergoes modification so that the current-potential curves exhibit an increasing hysteresis, making this material an excellent candidate to be used in energy storage devices or supercapacitors.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"51 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114366564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-08-01DOI: 10.1109/SBMicro.2019.8919330
L. P. Martins, H. Boudinov
Our work intends to develop dual-parameter pressure-temperature sensors by taking advantage of the independent thermoelectric and piezo resistive effects in a single flexible and compressible conductive foam. Such device allows to make measurements of simultaneous temperature and pressure monitoring by transducing external stimuli into separate electrical signals. The devices can be self-powered by a temperature gradient with a promising temperature and pressure detection resolution for applications in artificial intelligence and healthcare systems. Here, we describe the suggested method and discuss preliminary sensor results.
{"title":"Flexible Temperature-Pressure Organic Sensor","authors":"L. P. Martins, H. Boudinov","doi":"10.1109/SBMicro.2019.8919330","DOIUrl":"https://doi.org/10.1109/SBMicro.2019.8919330","url":null,"abstract":"Our work intends to develop dual-parameter pressure-temperature sensors by taking advantage of the independent thermoelectric and piezo resistive effects in a single flexible and compressible conductive foam. Such device allows to make measurements of simultaneous temperature and pressure monitoring by transducing external stimuli into separate electrical signals. The devices can be self-powered by a temperature gradient with a promising temperature and pressure detection resolution for applications in artificial intelligence and healthcare systems. Here, we describe the suggested method and discuss preliminary sensor results.","PeriodicalId":403446,"journal":{"name":"2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128632006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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