A. V. Kamanin, I. Mokina, N. Shmidt, L. A. Busygina, T. A. Yurre
{"title":"Polymer diffusants in III-V semiconductor compounds technology","authors":"A. V. Kamanin, I. Mokina, N. Shmidt, L. A. Busygina, T. A. Yurre","doi":"10.1109/ICIPRM.1996.492047","DOIUrl":null,"url":null,"abstract":"A Zn diffusion technique into III-V compounds from polymer spin-on films has been devised that allows to retain the initial surface morphology without any additional operations. This essentially simplifies the process. Moreover, the method provides a high portion (about 100%) of the electrically active Zn at N/sub Zn/<L(Zn). The technique shows promise for applying in the technology of III-V compound devices. The possibilities for the local diffusion through the windows of the SiO/sub 2/ mask with retention of dielectric properties of the mask is pointed out. During the Zn diffusion into Al/sub x/Ga/sub 1-x/As gettering of the Al atoms was observed that allowed to obtain the high Zn atoms concentration at their near-total activation. This process resulted in homogenization of the near-surface regions.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A Zn diffusion technique into III-V compounds from polymer spin-on films has been devised that allows to retain the initial surface morphology without any additional operations. This essentially simplifies the process. Moreover, the method provides a high portion (about 100%) of the electrically active Zn at N/sub Zn/
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