A 42.24 Gb/s Channel Bonding Up-Converter with integrated multi-LO generation in 45nm CMOS

A. Siligaris, P. Courouve, G. Waltener, A. Hamani, C. Dehos, J. González-Jiménez
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Abstract

This paper presents an energy-efficient wideband Vband channel-bonding up-converter. The circuit, fabricated in 45nm CMOS RFSOI technology is composed of four lanes and an output hybrid combiner based on differential coupled lines. The circuit has four I and Q inputs and each one gets up-converted to a different channel at V-band at the output. The four required LO frequencies (58.32, 60.48, 62.64 and 64.48 GHz) are generated onchip using high integer number frequency multiplication from a common reference input at2.16 GHz that sets the channel spacing. Four-channel 64-QAM modulation is demonstrated with a total data rate of 42.24 Gb/s and 9.9 pJ/b of energy efficiency.
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基于45nm CMOS的42.24 Gb/s通道键合上转换器
提出了一种高效节能的宽带v波段信道键合上变频器。该电路采用45nm CMOS RFSOI技术制造,由四个通道和一个基于差分耦合线的输出混合组合器组成。电路有四个I和Q输入,每个输入在输出端的v波段上转换到不同的通道。四个所需的LO频率(58.32、60.48、62.64和64.48 GHz)是在芯片上使用高整数频率乘法从一个设置通道间隔的2.16 GHz公共参考输入生成的。四通道64-QAM调制的总数据速率为42.24 Gb/s,能效为9.9 pJ/b。
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