RF figures of merit of polysilicon trap-rich layers formed locally by ion amorphization and nanosecond laser annealing

Abstract

We report on polysilicon trap-rich layers fabricated locally by ion implantation and nanosecond laser annealing on high-resistivity Si substrates. Using coplanar waveguides (of 1.5 mm length, $70 \mu \mathrm{m}$ central line width and $42 \mu \mathrm{m}$ spacing between central line and planar ground) we demonstrated RF figures of merit with the second harmonic of -84 dBm at an input RF power of 15 dBm and losses lower than 0.10 dB/mm at a 10 GHz frequency. The characteristics are stable with bias voltage. The proposed method is intended to fabricate trap-rich layers in selected wafer areas, potentially enabling the cointegration with FD-SOI technology.