M. Inac, F. Korndoerfer, F. Gerfers, A. Malignaggi
{"title":"Tunable and Highly Power Efficient Traveling Wave Amplifier in SiGe BiCMOS for Optical Modulators","authors":"M. Inac, F. Korndoerfer, F. Gerfers, A. Malignaggi","doi":"10.1109/SiRF56960.2023.10046248","DOIUrl":null,"url":null,"abstract":"In this paper, a highly efficient linear traveling wave amplifier enabling beyond 100GBaud optical data communication is presented, utilizing the “quasi-off” states approach to decrease the overall power consumption maintaining a high bandwidth. The circuit is designed in a SiGe BiCMOS technology featuring 15.3 dB small signal gain within a 87.4 GHz 3 dB bandwidth, while the 1dB output compression point reaches 13.3 dBm for a power efficiency of 4.1%. Time domain measurements demonstrate a non-return-to-zero transmission data rate of 120 Gb/s. The amplifier consumes an overall DC power of 499mW at maximum gain state, and the “quasi-off” states approach enables a power saving up to 50% without deteriorating the bandwidth.","PeriodicalId":354948,"journal":{"name":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiRF56960.2023.10046248","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this paper, a highly efficient linear traveling wave amplifier enabling beyond 100GBaud optical data communication is presented, utilizing the “quasi-off” states approach to decrease the overall power consumption maintaining a high bandwidth. The circuit is designed in a SiGe BiCMOS technology featuring 15.3 dB small signal gain within a 87.4 GHz 3 dB bandwidth, while the 1dB output compression point reaches 13.3 dBm for a power efficiency of 4.1%. Time domain measurements demonstrate a non-return-to-zero transmission data rate of 120 Gb/s. The amplifier consumes an overall DC power of 499mW at maximum gain state, and the “quasi-off” states approach enables a power saving up to 50% without deteriorating the bandwidth.
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