Optimization of Ag-Ag Direct Bonding for Wafer-Level Power Electronics Packaging via Design of Experiments

2019 International Conference on Electronics Packaging (ICEP) Pub Date : 2019-04-17 DOI:10.23919/ICEP.2019.8733496

Zechun Yu, Shize Wang, S. Letz, C. F. Bayer, Felix Häußler, A. Schletz, K. Suganuma

{"title":"Optimization of Ag-Ag Direct Bonding for Wafer-Level Power Electronics Packaging via Design of Experiments","authors":"Zechun Yu, Shize Wang, S. Letz, C. F. Bayer, Felix Häußler, A. Schletz, K. Suganuma","doi":"10.23919/ICEP.2019.8733496","DOIUrl":null,"url":null,"abstract":"In this study, Ag stress migration bonding (SMB) is demonstrated with various Ag film materials and bonding conditions. The main effects and interactions of various processing parameters such as bonding temperature, process time and applied pressure on the interfacial shear strength of the DUTs are firstly investigated via the design of experiments (DoE) method. The hillock and grain growth process in Ag films deposited on a Si substrate depending on process temperature and time has been investigated. Hillock formation is clearly observed on all film surfaces at 300 °C. Furthermore, various direct bonding tests are carried out with the optimal parameters using two different metal-stacks, Cr/Ni/Ag and Ti/Ag. Compared to the Cr/Ni/Ag metallized samples, a highly increased shear strength of 73 MPa is achieved with Ti/Ag film. In addition, the lifetime of direct bonded Ag joints was examined by passive thermal cycling tests. The results show no significant change in the shear strength after 700 thermal cycles.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ICEP.2019.8733496","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

Abstract

In this study, Ag stress migration bonding (SMB) is demonstrated with various Ag film materials and bonding conditions. The main effects and interactions of various processing parameters such as bonding temperature, process time and applied pressure on the interfacial shear strength of the DUTs are firstly investigated via the design of experiments (DoE) method. The hillock and grain growth process in Ag films deposited on a Si substrate depending on process temperature and time has been investigated. Hillock formation is clearly observed on all film surfaces at 300 °C. Furthermore, various direct bonding tests are carried out with the optimal parameters using two different metal-stacks, Cr/Ni/Ag and Ti/Ag. Compared to the Cr/Ni/Ag metallized samples, a highly increased shear strength of 73 MPa is achieved with Ti/Ag film. In addition, the lifetime of direct bonded Ag joints was examined by passive thermal cycling tests. The results show no significant change in the shear strength after 700 thermal cycles.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

基于实验设计的晶圆级电力电子封装中Ag-Ag直接键合工艺优化

本文在不同的银膜材料和不同的键合条件下，研究了银应力迁移键合(SMB)。首先通过实验设计(DoE)方法研究了不同工艺参数(如粘接温度、工艺时间和施加压力)对dut界面抗剪强度的主要影响和相互作用。研究了在硅衬底上沉积银薄膜的丘状和晶粒生长过程随工艺温度和时间的变化。在300°C时，在所有薄膜表面都可以清楚地观察到丘状的形成。此外，采用Cr/Ni/Ag和Ti/Ag两种不同的金属叠层，在最佳参数下进行了各种直接键合试验。与Cr/Ni/Ag金属化样品相比，Ti/Ag薄膜的抗剪强度提高了73 MPa。此外，通过被动热循环试验对直接连接银接头的寿命进行了研究。结果表明，经过700次热循环后，其抗剪强度无明显变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

2019 International Conference on Electronics Packaging (ICEP)

自引率

0.00%

发文量