B. Doris, Y. Zhang, D. Fried, J. Beintner, O. Dokumaci, W. Natzle, H. Zhu, D. Boyd, J. Holt, J. Petrus, J. Yates, T. Dyer, P. Saunders, M. Steen, E. Nowak, M. Ieong
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引用次数: 6
Abstract
A new concept in high performance VLSI called Simplified Hybrid Orientation Technology (SHOT) is introduced. This novel process flow creates circuits with independently oriented surface channels for pMOS and nMOS by integrating FinFETs with planar Ultra-Thin SOI (UTSOI) MOSFETs for the first time. The unique CMOS structure enables high mobility surface channel orientation for both devices. The SHOT scheme is also capable of producing PDSOI devices on the same chip. pFinFET drive current is among the best results reported (810 /spl mu/A//spl mu/m at V/sub dd/ = 1.2V).
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