{"title":"On the defect generation and low voltage extrapolation of Q/sub BD/ in SiO/sub 2//HfO/sub 2/ stacks","authors":"R. Degraeve, F. Crupi, D. Kwak, G. Groeseneken","doi":"10.1109/VLSIT.2004.1345440","DOIUrl":null,"url":null,"abstract":"The purpose of this paper is to demonstrate that at least a part of the initially present traps is indistinguishable from the electrically generated traps favouring the first interpretation. With this interpretation, we observe on our stack a trap generation threshold below which no degradation occurs, resulting in a virtually infinite Q/sub BD/ at low voltage. This optimistic result is, however, countered by the fact that the pre-stress traps dominate I/sub G/ at low V/sub G/ and limit the yield.","PeriodicalId":297052,"journal":{"name":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2004.1345440","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
The purpose of this paper is to demonstrate that at least a part of the initially present traps is indistinguishable from the electrically generated traps favouring the first interpretation. With this interpretation, we observe on our stack a trap generation threshold below which no degradation occurs, resulting in a virtually infinite Q/sub BD/ at low voltage. This optimistic result is, however, countered by the fact that the pre-stress traps dominate I/sub G/ at low V/sub G/ and limit the yield.
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