Circuit performance variability decomposition

M. Orshansky, C. Spanos, C. Hu
{"title":"Circuit performance variability decomposition","authors":"M. Orshansky, C. Spanos, C. Hu","doi":"10.1109/IWSTM.1999.773184","DOIUrl":null,"url":null,"abstract":"In this paper, circuit performance variability composition is analyzed. Traditionally, the device variability has been the dominant source. It is believed that with continuing technology scaling into the deep sub-micron regime, the interconnect constitutes an increasing portion of the overall circuit delay, and variability. In this paper, we analytically investigate the delay variability composition for an advanced 0.18 /spl mu/m CMOS technology, accounting for the significant intra-field variability. A more realistic model to estimate the variance of global interconnect lines is proposed. The results indicate that the device variability of good designs contributes about 90% of the overall variability.","PeriodicalId":253336,"journal":{"name":"1999 4th International Workshop on Statistical Metrology (Cat. No.99TH8391)","volume":"209 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 4th International Workshop on Statistical Metrology (Cat. No.99TH8391)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWSTM.1999.773184","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 25

Abstract

In this paper, circuit performance variability composition is analyzed. Traditionally, the device variability has been the dominant source. It is believed that with continuing technology scaling into the deep sub-micron regime, the interconnect constitutes an increasing portion of the overall circuit delay, and variability. In this paper, we analytically investigate the delay variability composition for an advanced 0.18 /spl mu/m CMOS technology, accounting for the significant intra-field variability. A more realistic model to estimate the variance of global interconnect lines is proposed. The results indicate that the device variability of good designs contributes about 90% of the overall variability.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
电路性能变异性分解
本文对电路的性能变异性组成进行了分析。传统上,设备的可变性一直是主要的来源。据信,随着技术不断扩展到深亚微米范围,互连构成了整个电路延迟和可变性的越来越大的一部分。在本文中,我们分析了先进的0.18 /spl mu/m CMOS技术的延迟可变性组成,考虑了显著的场内可变性。提出了一种更为实际的估计全局互连线方差的模型。结果表明,良好设计的器件可变性约占总体可变性的90%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Fault diagnosis of analog integrated circuits using response surface methods TCAD-prototyping with new accurate worst-case definition for a 0.2 micron CMOS-ASIC process Circuit performance variability decomposition Impact of RSF with variable coefficients for CD variation analysis including OPC A systematic and physical application of multivariate statistics to MOSFET I-V models
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1