A systematic and physical application of multivariate statistics to MOSFET I-V models

Abstract

A statistical method applicable to MOSFET compact models for circuit simulation is proposed. A salient feature of the method is that correlation between device parameters is formulated by independent physical parameters which dominate MOSFET characteristics. The key idea is the introduction of an intermediate model. With the use of the intermediate model, physical parameter fluctuations are systematically mapped into the parameters of many device models. As the device parameters are expressed as functions of the independent physical parameters, the worst-case parameters can be accurately derived from the statistical model. The efficiency of the proposed method is shown with experimental results from a 0.3 /spl mu/m CMOS processing technology.