Challenges of 2-D (3-D) device doping process and doping profiling metrology

Abstract

The appearance of 3-D devices and structures has changed the doping technologies and doping profiling metrology. This change also implies that novel concepts for 3-D dopant and carrier profiling measurements are necessary. 1.5-D SIMS can be used to study dopant incorporation in 3-D structures. SSRM and electron holography methods have been developed and well-established on 2-D cross-sectional doping profiling measurements. Although SSRM and electron holography approaches are inherently 2-D, extensions towards 3-D structures are capable either by the dedicated design of test structures or by the approaches of mechanical slicing and polishing. Thanks to the new 2-D (3-D) doping profiling measurements, PLAD process has been demonstrated beneficial on 3-D device manufacturing.