Deactivation Phenomenon for 0.18um Technology Indium Channel NMOS Devices

Abstract

We present experimental as well as simulation data which ehibits a deactivation phenomenon of Indium in the low dose regime. We used Indium to fabricate super-steep retrograde channel profiles for a state-ofthe-art CMOS technology. By introduction of a specific combination of dopants Indium exhibits an unexpected deactivation phenomenon which could be verified experimentally as well as by using quantumchemical simulation tools. It was found that the combination of Indium, Boron and Nitrogen in the channel region causes severe deactivation and an increase in channel dose was ineffective to raise the threshold voltage.