C. Le Royer, A. Pouydebasque, K. Romanjek, V. Barral, M. Vinet, J. Hartmann, E. Augendre, H. Grampeix, L. Lachal, C. Tabone, B. Previtali, R. Truche, F. Allain
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引用次数: 11
Abstract
We report here experimental investigations on GeOI pMOSFET: Besides the +65% mobility enhancement in narrow channel GeOI pMOSFETs as compared to wide channels, attributed to improved sidewall transport properties, 〈100〉 channel orientation transport is investigated for the first time in Ge (001): unlike Si, no current gain is observed compared to 〈110〉 channel orientation. Finally, ballisticity rates (BR) and source injection velocities (vinj) were extracted, demonstrating 22% higher vinj in Ge than in Si.
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