Yu-Sheng Chen, T. Wu, P. Tzeng, Pang-Shiu Chen, Heng-Yuan Lee, Cha-Hsin Lin, Frederick T. Chen, M. Tsai
{"title":"Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation","authors":"Yu-Sheng Chen, T. Wu, P. Tzeng, Pang-Shiu Chen, Heng-Yuan Lee, Cha-Hsin Lin, Frederick T. Chen, M. Tsai","doi":"10.1109/VTSA.2009.5159281","DOIUrl":null,"url":null,"abstract":"A forming-free resistive memory of TiN/Ti/HfO2/TiN with a thin HfO2 film is demonstrated. The as-fabricated device can be operated without additional forming step to initiate the operation. This device with bipolar operation mode shows high speed (∼ 10 ns), robust endurance (≫ 106 times), good data retention (10-year lifetime), enough resistance ratio, and low power consumption. The simple structure and capability of multi-level operation demonstrate RRAM as a high-density memory in the near future.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"38","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159281","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 38
Abstract
A forming-free resistive memory of TiN/Ti/HfO2/TiN with a thin HfO2 film is demonstrated. The as-fabricated device can be operated without additional forming step to initiate the operation. This device with bipolar operation mode shows high speed (∼ 10 ns), robust endurance (≫ 106 times), good data retention (10-year lifetime), enough resistance ratio, and low power consumption. The simple structure and capability of multi-level operation demonstrate RRAM as a high-density memory in the near future.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
