{"title":"A Study on Transparent and Flexible Capacitor using Hybrid Zinc Oxide: Indium Tin Oxide and Silver as electrodes","authors":"S. Franklin, J. G. Jency","doi":"10.1109/ICDCSYST.2018.8605134","DOIUrl":null,"url":null,"abstract":"Transparent flexible capacitors are important in the development of advanced future electronics devices like transparent sensors, electronic devices, high pixel displays, thin film multilayer solar cells and transparent circuit. Transparent conducting films has a composite structure of Aluminium doped zinc Oxide - silver nanowire (AgNWs) is deposited using pulsed laser deposition technique. The resistance of transparent conducting films is 120 Ω/mm when ITO and AgNW network were involved. Transparent capacitors with the dielectric structure of AhO3-TiO2- AI2O3 were fabricated on the composite electrodes, with a capacitance density of 10.1fF μm-2. The broad frequency ranges from 3 kHz to 1 MHz. The flexibility is found to be a maximum of 25mm without changing the capacitance. Transparency of capacitor is demonstrated at an average optical transmittance of over 75–80% in the visible range, and thus the practical application of transparent devices and integrated circuits is obtained.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSYST.2018.8605134","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Transparent flexible capacitors are important in the development of advanced future electronics devices like transparent sensors, electronic devices, high pixel displays, thin film multilayer solar cells and transparent circuit. Transparent conducting films has a composite structure of Aluminium doped zinc Oxide - silver nanowire (AgNWs) is deposited using pulsed laser deposition technique. The resistance of transparent conducting films is 120 Ω/mm when ITO and AgNW network were involved. Transparent capacitors with the dielectric structure of AhO3-TiO2- AI2O3 were fabricated on the composite electrodes, with a capacitance density of 10.1fF μm-2. The broad frequency ranges from 3 kHz to 1 MHz. The flexibility is found to be a maximum of 25mm without changing the capacitance. Transparency of capacitor is demonstrated at an average optical transmittance of over 75–80% in the visible range, and thus the practical application of transparent devices and integrated circuits is obtained.