Pulsed Laser Deposited Molybdenum Oxides (MoO3 & MoO2) Thin Films for Nanoelectronics Device Application

Abstract

Orthorhombic molybdenum trioxide (MoO3) and monoclinic molybdenum dioxide (MoO2) thin films were prepared using the pulsed laser deposition technique under the oxygen (O2) and Argon (Ar) processing gas atmospheres. The MoO3 samples were pulsed laser deposited over a range of deposition temperature, 303K to 873K at 10Hz in the O2 atmosphere. The characterisation of both the oxide thin films was studied using FESEM, XRD, UV-Visible spectroscopy, Hall measurement systems and linear sweep voltammetry. This deposition technique would be an effective deposition method for MoO3 and MoO2 thin films due to the fast, high quality, stoichiometric and eco-friendly process. The surface morphology dramatically changed by substrate deposition and deposition time at different temperatures. The samples were annealed at 673K and the properties were analysed. The neatly decorated nanostructures of 500 nm thick MoO3 and MoO2 are obtained for 12000 shots laser ablated samples and are then characterized. The IV characteristics, optical and electrical properties provide essential characteristics results for the potential nanoelectronics applications.