The impact of recovery on BTI reliability assessments

H. Reisinger, Tibor Grasser, K. Hofmann, W. Gustin, C. Schlunder
{"title":"The impact of recovery on BTI reliability assessments","authors":"H. Reisinger, Tibor Grasser, K. Hofmann, W. Gustin, C. Schlunder","doi":"10.1109/IIRW.2010.5706474","DOIUrl":null,"url":null,"abstract":"BTI is shown to be the most important device degradation mechanism for combinational logic. Significant benefits regarding lifetime predictions and the total effort in measurement time can be expected from measurements minimizing recovery by a short measuring delay or/and assessments being done with AC stress for applications ensuring AC operation only.","PeriodicalId":332664,"journal":{"name":"2010 IEEE International Integrated Reliability Workshop Final Report","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2010.5706474","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

Abstract

BTI is shown to be the most important device degradation mechanism for combinational logic. Significant benefits regarding lifetime predictions and the total effort in measurement time can be expected from measurements minimizing recovery by a short measuring delay or/and assessments being done with AC stress for applications ensuring AC operation only.
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恢复对BTI可靠性评估的影响
BTI是组合逻辑中最重要的器件退化机制。对于寿命预测和测量时间内的总工作量,可以通过短测量延迟最小化恢复或/和仅在确保交流操作的应用中进行交流应力评估来实现显著的好处。
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