Avashesh Dubey, Mridula Gupta, R. Narang, M. Saxena
{"title":"Comparative Study of CMOS based Dosimeters for Gamma Radiation","authors":"Avashesh Dubey, Mridula Gupta, R. Narang, M. Saxena","doi":"10.1109/ICDCSYST.2018.8605158","DOIUrl":null,"url":null,"abstract":"In this paper, a quantitative comparison study of the CMOS based Double Gate RADFET, Gate All Around (GAA) RADFET, Junctionless Double Gate (JL-DG) RADFET dosimeter and their electrical performance has been carried out. Gamma radiation Model of Sentaurus 3D Device simulator has been used to investigate the trapping detrapping of electron hole due to the moderate dose radiation environment. The impact of the total dose on the threshold voltage and drain current has been addressed. The obtained results indicate improvement in the subthreshold parameters of JL DG RADFET as compared to the conventional DG RADFET and GAA RADFET dosimeter.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSYST.2018.8605158","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
In this paper, a quantitative comparison study of the CMOS based Double Gate RADFET, Gate All Around (GAA) RADFET, Junctionless Double Gate (JL-DG) RADFET dosimeter and their electrical performance has been carried out. Gamma radiation Model of Sentaurus 3D Device simulator has been used to investigate the trapping detrapping of electron hole due to the moderate dose radiation environment. The impact of the total dose on the threshold voltage and drain current has been addressed. The obtained results indicate improvement in the subthreshold parameters of JL DG RADFET as compared to the conventional DG RADFET and GAA RADFET dosimeter.
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